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SavantIC

BU941ZPFI Datasheet Preview

BU941ZPFI Datasheet

SILICON POWER TRANSISTOR

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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU941ZPFI
DESCRIPTION
www.dat·aWshiethet4TuO.co-3mPML package
·DARLINGTON
·High breakdown voltage
APPLICATIONS
·High ruggedness electronic ignitions
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCEO
VEBO
Collector-emitter voltage
Emitter-base voltage
IC Collector current
ICM Collector current-peak
IB Base current
IBM Base current-peak
PT Total power dissipation
Tj Max.operating junction temperature
Tstg Storage temperature
CONDITIONS
Open base
Open collector
TC=25
VALUE
350
5
15
30
1
5
65
175
-65~175
UNIT
V
V
A
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-case Thermal resistance junction case
MAX
2.3
UNIT
/W




SavantIC

BU941ZPFI Datasheet Preview

BU941ZPFI Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACT ERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCL Clamping voltage
IC=0.1 A ;IB=0
VCE(sat-1) Collector-emitter saturation voltage IC=8A; IB=100m A
VCE(sat-2) Collector-emitter saturation voltage IC=10A; IB=250m A
VCE(sat-3) Collector-emitter saturation voltage IC=12A; IB=300m A
VBE(sat-1) Base-emitter saturation voltage
IC=8A; IB=100m A
VBE(sat-2) Base-emitter saturation voltage
IC=10A; IB=250m A
VBE(sat-3) Base-emitter saturation voltage
ICEO Collector cut-off current
IEBO Emitter cut-off current
IC=12A; IB=300m A
VCE=300V; IB=0
TC=125
VEB=5V; IC=0
hFE DC current gain
IC=5A ; VCE=10V
VF Diode forward voltage
IF=10A
Product Specification
BU941ZPFI
MIN TYP. MAX UNIT
350 500 V
1.8 V
1.8 V
2.0 V
2.2 V
2.5 V
2.7 V
0.1
0.5
mA
20 mA
300
2.5 V
2


Part Number BU941ZPFI
Description SILICON POWER TRANSISTOR
Maker SavantIC
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BU941ZPFI Datasheet PDF






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