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SavantIC

BUW11AF Datasheet Preview

BUW11AF Datasheet

SILICON POWER TRANSISTOR

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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BUW11F BUW11AF
DESCRIPTION
·With TO-3PFa package
www.dat·aHshigeeht4vuo.clotamge ;high speed
APPLICATIONS
·Converters
·Inverters
·Switching regulators
·Motor control systems
PINNING (See Fig.2)
PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
l
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
BUW11F
BUW11AF
VCEO
BUW11F
Collector-emitter voltage
BUW11AF
VEBO
IC
ICM
Emitter-base voltage
Collector current
Collector current-peak
IB Base current
IBM Base current-peak
PT Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
Thermal resistance from junction to ambient
VALUE
850
1000
400
450
9
5
10
2
4
41
150
-65~150
UNIT
V
V
V
A
A
A
A
W
MAX
35
UNIT
K/W




SavantIC

BUW11AF Datasheet Preview

BUW11AF Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BUW11F BUW11AF
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
BUW11F
BUW11AF
IC=0.1A ; IB=0; L=25mH
VCEsat
Collector-emitter
saturation voltage
BUW11F IC=3A; IB=0.6A
BUW11AF IC=2.5A; IB=0.5A
VBEsat
ICES
IEBO
Base-emitter
saturation voltage
BUW11F IC=3A; IB=0.6A
BUW11AF IC=2.5A; IB=0.5A
Collector cut-off current
VCE=Rated VCES; VBE=0
Tj=125
Emitter cut-off current
VEB=9V; IC=0
hFE-1
DC current gain
IC=5mA ; VCE=5V
hFE-2
DC current gain
IC=0.5A ; VCE=5V
Switching times resistive load
ton Turn-on time
ts Storage time
tf Fall time
For BUW11F
IC=3A ;IB1=-IB2=-0.6A
For BUW11AF
IC=2.5A ;IB1=-IB2=-0.5A
MIN TYP. MAX UNIT
400
V
450
1.5 V
1.4 V
1.0
2.0
mA
10 mA
10 35
10 35
1.0 µs
4.0 µs
0.8 µs
2


Part Number BUW11AF
Description SILICON POWER TRANSISTOR
Maker SavantIC
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BUW11AF Datasheet PDF






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