C3855 Overview
Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=50mA ;IB=0 IC=5A; VCE=12V 50 MIN 140 2SC3855 SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE fT TYP. Product Specification Silicon NPN Power...