Datasheet Details
| Part number | D2061 |
|---|---|
| Manufacturer | SavantIC |
| File Size | 107.07 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet |
 D2061 Datasheet
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| Part number | D2061 |
|---|---|
| Manufacturer | SavantIC |
| File Size | 107.07 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet |
D2061 Datasheet
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·With TO-220Fa package ·Low collector saturation voltage ·Excellent DC current gain characteristics ·Wide safe operating area APPLICATIONS ·For low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage IC Collector current (DC) ICM Collector current-Peak PC Collector power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 Ta=25 VALUE 80 60 5 3 6 30 2 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD2061 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=1mA , IB=0 V(BR)CBO Collector-base breakdown voltage IC=50µA , IE=0 V(BR)EBO Emitter-base breakdown voltage IE=50µA , IC=0 VCEsat Collector-emitter saturation voltage IC=2A;
IB=0.2A VBEsat Base-emitter saturation voltage IC=2A ;IB=0.2A ICBO Collector cut-off current VCB=60V IE=0 IEBO Emitter cut-off current VEB=4V;
IC=0 hFE DC current gain IC=0.5A ;
SavantIC Semiconductor Silicon NPN Power Transistors Product.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
D2061 | NPN Transistor | Jiangsu Changjiang Electronics |
 |
D2061 | PNP Transistor | SeCoS |
| Part Number | Description |
|---|---|
| D2060 | 2SD2060 |
| D2023 | 2SD2023 |
| D2025 | Silicon NPN Power Transistors |
| D2053 | 2SD2053 |
| D2059 | Silicon NPN Power Transistors |