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SavantIC

D2061 Datasheet Preview

D2061 Datasheet

Silicon NPN Power Transistors

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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD2061
DESCRIPTION
·With TO-220Fa package
·Low collector saturation voltage
·Excellent DC current gain characteristics
·Wide safe operating area
APPLICATIONS
·For low frequency power
amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current (DC)
ICM Collector current-Peak
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
Ta=25
VALUE
80
60
5
3
6
30
2
150
-55~150
UNIT
V
V
V
A
A
W




SavantIC

D2061 Datasheet Preview

D2061 Datasheet

Silicon NPN Power Transistors

No Preview Available !

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD2061
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=1mA , IB=0
V(BR)CBO Collector-base breakdown voltage
IC=50µA , IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=50µA , IC=0
VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A
VBEsat
Base-emitter saturation voltage
IC=2A ;IB=0.2A
ICBO Collector cut-off current
VCB=60V IE=0
IEBO Emitter cut-off current
VEB=4V; IC=0
hFE DC current gain
IC=0.5A ; VCE=5V
fT Transition frequency
IC=0.5A ; VCE=5V;f=5MHz
Cob Output capacitance
IE=0 ; VCB=10V ,f=1MHz
hFE Classifications
EF
100-200 160-320
MIN TYP. MAX UNIT
60 V
80 V
5V
1.0 V
1.5 V
10 µA
10 µA
100 320
8 MHz
70 pF
2


Part Number D2061
Description Silicon NPN Power Transistors
Maker SavantIC
Total Page 3 Pages
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