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SavantIC

D880 Datasheet Preview

D880 Datasheet

Silicon NPN Power Transistors

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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD880
DESCRIPTION
www.dat·aWshiethet4Tu.Oco-m220C package
·Complement to type 2SB834
·Low collector saturation voltage
APPLICATIONS
·Designed for use in audio frequency
power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
IB
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-Peak
Base current
Collector dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
CHARACTERISTICS
R:jc
Thermal resistance junction to case
VALUE
60
60
7
3
6
0.5
30
150
-50~150
UNIT
V
V
V
A
A
A
W
MAX
4.16
UNIT
/W




SavantIC

D880 Datasheet Preview

D880 Datasheet

Silicon NPN Power Transistors

No Preview Available !

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD880
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A
VBE Base-emitter on voltage
ICBO Collector cut-off current
IEBO Emitter cut-off current
hFE DC current gain
IC=0.5A ; VCE=5V
VCB=60V; IE=0
VEB=7V; IC=0
IC=0.5A ; VCE=5V
fT Transition frequency
IC=0.5A ; VCE=5V;f=1MHz
Switching times
ton Turn-on time
ts Storage time
tf Fall time
IC=10IB1=-10IB2=2A
VCC=30V
PW=30µs
MIN TYP. MAX UNIT
60 V
7V
1.0 V
1.0 V
100 µA
100 µA
60 300
3 MHz
1.2 µs
2.0 µs
1.1 µs
hFE Classifications
O Y GR
60-120 100-200 150-300
2


Part Number D880
Description Silicon NPN Power Transistors
Maker SavantIC
Total Page 3 Pages
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