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SavantIC

MJ2500 Datasheet Preview

MJ2500 Datasheet

(MJ2500 / MJ2501) SILICON POWER TRANSISTOR

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SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
MJ2500/2501
DESCRIPTION
·With TO-3 package
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·DARLINGTON
·High DC current gain
·Complement to type MJ3000/3001
APPLICATIONS
·For use as output devices in complementary
general purpose amplifier applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(TC=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
MJ2500
MJ2501
Open emitter
VCEO
Collector-emitter voltage
MJ2500
MJ2501
Open base
VEBO
Emitter-base voltage
Open collector
IC Collector current
IB Base current
PD Total power dissipation
TC=25
Tj Junction temperature
Tstg Storage temperature
VALUE
-60
-80
-60
-80
-5
-10
-0.2
150
200
-55~200
UNIT
V
V
V
A
A
W




SavantIC

MJ2500 Datasheet Preview

MJ2500 Datasheet

(MJ2500 / MJ2501) SILICON POWER TRANSISTOR

No Preview Available !

SavantIC Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
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SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
MJ2500
MJ2501
IC=-0.1A ;IB=0
VCE(sat)-1 Collector-emitter saturation voltage IC=-5A; IB=-20mA
VCE(sat)-2 Collector-emitter saturation voltage IC=-10A; IB=-50mA
VBE Base-emitter on voltage
IC=-5A ; VCE=-3V
MJ2500
VCE=-60V; RBE=1.0k?
TC=150
ICER Collector cut-off current
MJ2501
VCE=-80V; RBE=1.0k?
TC=150
MJ2500 VCE=-30V; IB=0
ICEO Collector cut-off current
MJ2501 VCE=-40V; IB=0
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE DC current gain
IC=-5A ; VCE=-3V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
Product Specification
MJ2500/2501
MIN TYP. MAX UNIT
-60
V
-80
-2.0 V
-4.0 V
-3.0 V
1.0
5.0
mA
1.0
5.0
-1.0 mA
1000
-2.0 mA
MAX
1.17
UNIT
/W
2


Part Number MJ2500
Description (MJ2500 / MJ2501) SILICON POWER TRANSISTOR
Maker SavantIC
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MJ2500 Datasheet PDF






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