SavantIC MJ3000
Silicon NPN Power Transistors
DESCRIPTION
●With TO-3 package●DARLINGTON
●High DC current gain
●Complement to type MJ2500/2501
APPLICATIONS
●For use as output devices in complementary general purpose amplifier applications PINNING(see Fig.2) PINDESCRIPTION
1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbolABSOLUTE MAXIMUM RATINGS
(TC=25 ) SYMBOL PARAMETER CONDITIONS VCBO Collector-base voltage MJ3000 MJ3001 Open emitter VCEO Collector-emitter voltage MJ3000 MJ3001 Open base VEBO Emitter-base voltage Open collector IC Collector current IB Base current PD Total power dissipation TC=25 Tj Junction temperature Tstg Storage temperature VALUE 60 80 60 80 5 10 0.2 150 200 -55~200 UNIT V V V A A W SavantIC Semiconductor Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage MJ3000 MJ3