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Savantic
Savantic

2N6285 Datasheet Preview

2N6285 Datasheet

(2N6285 - 2N6287) Silicon PNP Power Transistors

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2N6285 pdf
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2N6285 2N6286 2N6287
DESCRIPTION
·With TO-3 package
·Complement to type 2N6282/6283/6284
·High DC current gain
·DARLINGTON
APPLICATIONS
·For use in general-purpose amplifier and
low-frequency switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
2N6285
VCBO
Collector-base voltage
2N6286
2N6287
2N6285
VCEO
Collector-emitter voltage 2N6286
2N6287
VEBO
IC
ICM
IB
PD
Tj
Tstg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total Power Dissipation
Junction temperature
Storage temperature
CONDITIONS
www.DataSheet.net/
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
-60
-80
-100
-60
-80
-100
-5
-20
-40
-0.5
160
200
-65~200
UNIT
V
V
V
A
A
A
W
VALUE
1.09
UNIT
/W
Datasheet pdf - http://www.DataSheet4U.co.kr/



Savantic
Savantic

2N6285 Datasheet Preview

2N6285 Datasheet

(2N6285 - 2N6287) Silicon PNP Power Transistors

No Preview Available !

2N6285 pdf
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2N6285 2N6286 2N6287
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6285
2N6286 IC=-0.2A ;IB=0
2N6287
VCEsat-1 Collector-emitter saturation voltage IC=-10A; IB=-40mA
VCEsat-2 Collector-emitter saturation voltage IC=-20A ;IB=-200mA
VBEsat Base-emitter saturation voltage
IC=-20A ;IB=-200mA
VBE Base-emitter on voltage
IC=-10A ; VCE=-3V
2N6285 VCE=-30V; IB=0
ICEO
Collector cut-off current 2N6286
VCE=-40V; IB=0
www.DataSheet.net/
2N6287 VCE=-50V; IB=0
2N6285
VCE=-60V; VBE=-1.5V
TC=150
ICEX
Collector cut-off current 2N6286
VCE=-80V; VBE=-1.5V
TC=150
2N6287
VCE=-100V; VBE=-1.5V
TC=150
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-10A ; VCE=-3V
hFE-2
DC current gain
IC=-20A ; VCE=-3V
COB Output capacitance
IE=0; VCB=-10V;f=1MHz
MIN TYP. MAX UNIT
-60
-80 V
-100
-2.0 V
-3.0 V
-4.0 V
-2.8 V
-1.0 mA
-0.5
-5.0
-0.5
-5.0
mA
-0.5
-5.0
-2.0 mA
750 18000
100
600 pF
2
Datasheet pdf - http://www.DataSheet4U.co.kr/


Part Number 2N6285
Description (2N6285 - 2N6287) Silicon PNP Power Transistors
Maker Savantic
Total Page 3 Pages
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2N6285 pdf
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