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MJE15032 Datasheet Preview

MJE15032 Datasheet

Silicon NPN Power Transistors

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www.daStaasvhaenett4ICu.cSoemmiconductor
Silicon NPN Power Transistors
Product Specification
MJE15032
DESCRIPTION
·With TO-220C package
·Complement to type MJE15033
·High transition frequency
·DC current gain specified to 5.0 amperes
hFE = 50 (Min) @ IC = 0.5 Adc
hFE = 10 (Min) @ IC = 2.0 Adc
APPLICATIONS
·Designed for use as high–frequency
drivers in audio amplifiers.
PINNING
PIN
DESCRIPTION
1 Base
2
Collector;connected to
mounting base
3 Emitter
ABSOLUTE MAXIMUM RATINGS(Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IB
PD
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Base current
Total power dissipation
Junction temperature
Storage temperature
Open emitter
Open base
Open collector
Ta=25
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Rth j-A
Thermal resistance ; junction to case
Thermal resistance , junction to ambient
VALUE
250
250
5
8
16
2
2
50
150
-65~150
UNIT
V
V
V
A
A
A
W
MAX
2.5
62.5
UNIT
/W
/W




Savantic

MJE15032 Datasheet Preview

MJE15032 Datasheet

Silicon NPN Power Transistors

No Preview Available !

www.daStaasvhaenett4ICu.cSoemmiconductor
Silicon NPN Power Transistors
Product Specification
MJE15032
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=10mA; IB=0
VCE(sat) Collector-emitter saturation voltage IC=1A ;IB=0.1A
VBE Base-emitter on voltage
IC=1A ; VCE=5V
ICBO Collector cut-off current
VCB=150V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.5A ; VCE=5V
hFE-2
DC current gain
IC=1A ; VCE=5V
hFE-3
DC current gain
IC=2A ; VCE=5V
fT Transition frequency
IC=0.5A;VCE=10V;f=1.0MHz
MIN TYP. MAX UNIT
250 V
0.5 V
1.0 V
10 µA
10 µA
50
50
10
30 MHz
2


Part Number MJE15032
Description Silicon NPN Power Transistors
Maker Savantic
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MJE15032 Datasheet PDF





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