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SeCoS
SeCoS

BAV99BRW Datasheet Preview

BAV99BRW Datasheet

Surface Mount Switching Diode Array

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BAV99BRW pdf
Elektronische Bauelemente
BAV99BRW
Quad Chips
Surface Mount Switching Diode Array
FEATURES
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
· Fast Switching Speed
· Surface Mount Package Ideally Suited for
Automatic Insertion
· For General Purpose Switching Applications
· High Conductance
SOT-363
.055(1.40)
.047(1.20)
.026TYP
(0.65TYP)
.021REF
(0.525)REF
8o
0o
.096(2.45)
.085(2.15)
.053(1.35)
.045(1.15)
TOP VIEW
MAXIMUM RATINGS (EACH DIODE)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
BAV99BRW= KGJ
Symbol
VR
IF
IFM(surge)
Value
75
150
400
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
Max
200
1.8
556
250
2.4
417
– 55 to +150
Unit
Vdc
mAdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 100 µAdc)
Reverse Voltage Leakage Current
(VR = 25 Vdc, TJ = 150°C)
(VR = 70 Vdc)
(VR = 70 Vdc, TJ = 150°C)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1) RL = 100
V(BR)
IR
CD
VF
trr
1. FR– 5 = 1.0 X 0.75 X 0.062 in. 2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
.014(0.35)
.006(0.15)
.087(2.20)
.079(2.00)
.018(0.46)
.010(0.26)
.043(1.10)
.035(0.90)
.006(0.15)
.003(0.08)
.004(0.10)
.000(0.00)
.039(1.00)
.035(0.90)
Dimensions in inches and (millimeters)
Min Max Unit
75 — Vdc
µAdc
30
— 2.5
50
2 pF
mVdc
— 715
— 855
— 1000
— 1250
4.0 ns
http://www.SeCoSGmbH.com
09-Apr-2007 Rev. A
Any changing of specification will not be informed individual
Page 1 of 2



SeCoS
SeCoS

BAV99BRW Datasheet Preview

BAV99BRW Datasheet

Surface Mount Switching Diode Array

No Preview Available !

BAV99BRW pdf
Elektronische Bauelemente
BAV99BRW
Dual Series Chips
Surface Mount Switching Diode
+10 V
820
2.0 k
100 µH
0.1 µF
IF
50 Output
Pulse
Generator
DUT
0.1 µF
tr tp
10%
t
50 Input
Sampling
Oscilloscopes
VR
90%
Input Signal
IF
trr t
IR(REC) = 1.0 mA
IR
Output Pulse
(IF = IR = 10 mA; Measured
at IR(REC) = 1.0 mA)
100
10
1.0
0.1
0.2
Notes: 1. A 2.0 kvariable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
TA = 85°C
10
TA = 150°C
1.0 TA = 125°C
TA = – 40°C
TA = 25°C
0.1
0.01
TA = 85°C
TA = 55°C
0.001
0.4 0.6 0.8 1.0 1.2
0
VF, Forward Voltage (V)
Figure 2. Forward Voltage
TA = 25°C
10 20 30 40
VR, Reverse Voltage (V)
Figure 3. Leakage Current
50
0.68
0.64
0.60
0.56
0.52
0
2 46
VR, Reverse Voltage (V)
Figure 4. Capacitance
8
http://www.SeCoSGmbH.com
09-Apr-2007 Rev. A
Any changing of specification will not be informed individual
Page 2 of 2


Part Number BAV99BRW
Description Surface Mount Switching Diode Array
Maker SeCoS
Total Page 2 Pages
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