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BAW56 Datasheet Preview

BAW56 Datasheet

Surface Mount Switching Diode

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Elektronische Bauelemente
BAW56
Dual Chips Common Anode
Surface Mount Switching Diode
RoHS Compliant Product
FEATURES
A suffix of "-C" specifies halogen & lead-free
A
· Fast Switching Speed
L
· Surface Mount Package Ideally Suited for
Automatic Insertion
· For General Purpose Switching Applications
3
Top View
1
2
BS
· High Conductance
V
G
CATHODE
3
ANODE
3
1
2
CATHODE
1
2
C
D
H
K
J
MAXIMUM RATINGS (EACH DIODE)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
BAW56 = A1
Symbol
VR
IF
IFM(surge)
Value
70
200
500
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
Max
225
1.8
556
300
2.4
417
– 55 to +150
Unit
Vdc
mAdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 100 µAdc)
V(BR)
70
Reverse Voltage Leakage Current
(VR = 25 Vdc, TJ = 150°C)
(VR = 70 Vdc)
(VR = 70 Vdc, TJ = 150°C)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
IR
CD
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
VF
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1) RL = 100
trr
1. FR– 5 = 1.0 X 0.75 X 0.062 in. 2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
Max
30
2.5
50
2.0
715
855
1000
1250
6.0
Unit
Vdc
µAdc
pF
mVdc
ns
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 2




SeCoS

BAW56 Datasheet Preview

BAW56 Datasheet

Surface Mount Switching Diode

No Preview Available !

Elektronische Bauelemente
BAW56
Dual Chips Common Anode
Surface Mount Switching Diode
820
+10 V
2.0 k
100 µH IF
0.1 µF
DUT
50 Output
Pulse
Generator
0.1 µF
tr
tp
t
10%
50 Input
Sampling
VR
Oscilloscopes
90%
Input Signal
IF
trr
t
IR(REC) = 1.0 mA
IR
Output Pulse
(IF = IR = 10 mA; Measured
at IR(REC) = 1.0 mA)
Notes: 1. A 2.0 kvariable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
Curves Applicable to Each Cathode
100
10
TA = 85°C
1.0
10
TA = – 40°C
0.1
1.0
TA = 25°C
0.01
TA = 150°C
TA = 125°C
TA = 85°C
TA = 55°C
0.1
0.001
0.2
0.4
0.6
0.8
1.0
1.2
0
VF, Forward Voltage (V)
Figure 2. Forward Voltage
TA = 25°C
10
20
30
40
50
VR, Reverse Voltage (V)
Figure 3. Leakage Current
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
1.75
1.5
1.25
1.0
0.75
0
2
4
6
8
VR, Reverse Voltage (V)
Figure 4. Capacitance
Any changing of specification will not be informed individual
Page 2 of 2



Part Number BAW56
Description Surface Mount Switching Diode
Maker SeCoS
Total Page 2 Pages
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