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BC817W - NPN Transistor

General Description

The BC817W is designed for switching and AF amplifier application, suitable for driver storages and low power output storages.

Key Features

  • For General AF Appliacations.
  • High Collector Current.
  • High Current Gain.
  • Low Collector-Emitter Saturation Voltage.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente RoHS Compliant Product BC817W NPN Transistor Epitaxial Planar Transistor Description The BC817W is designed for switching and AF amplifier application, suitable for driver storages and low power output storages. Features * For General AF Appliacations * High Collector Current * High Current Gain * Low Collector-Emitter Saturation Voltage ABSOLUTE MAXIMUM RATINGS Ta=25oC Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current PD Total Power Dissipation TJ,Tstg Junction and Storage Temperature REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF.