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SeCoS

BC848BW Datasheet Preview

BC848BW Datasheet

NPN Transistor

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Elektronische Bauelemente
BC846AW,BW
BC847AW, BW, CW
BC848AW, BW, CW
NPN Plastic Encapsulate Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Ideally suited for automatic insertion
For Switching and AF Amplifier Applications
Base
Emitter
Collector
MARKING
BC846AW=1A;BC846BW=1B;
BC847AW=1E;BC847BW=1F;BC847CW=1G;
BC848AW=1J;BC848BW=1K;BC848CW=1L
Collector


Base

Emitter
SOT-323
A
L
3
Top View
CB
12
KE
1
3
2
D
F GH J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
1.80 2.20
1.80 2.45
1.15 1.35
0.80 1.10
1.20 1.40
0.20 0.40
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.100 REF.
0.525 REF.
0.08 0.25
--
0.650 TYP.
ABSOLUTE MAXIMUM RATINGS ( TA = 25°C unless otherwise noted )
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
BC846W
BC847W
BC848W
BC846W
BC847W
BC848W
BC846W
BC847W
BC848W
SYMBOL
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
RATINGS
80
50
30
65
45
30
6
6
5
0.1
150
150, -55 ~ 150
UNIT
V
V
V
A
mW
24-Mar-2010 Rev. A
Page 1 of 4




SeCoS

BC848BW Datasheet Preview

BC848BW Datasheet

NPN Transistor

No Preview Available !

Elektronische Bauelemente
BC846AW,BW
BC847AW, BW, CW
BC848AW, BW, CW
NPN Plastic Encapsulate Transistor
ELECTRICAL CHARACTERISTICS ( Tamb = 25°C unless otherwise specified )
PARAMETER
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cutoff Current
Collector to Emitter Saturation Voltage
BC846W
BC847W
BC848W
BC846W
BC847W
BC848W
BC846W
BC847W
BC848W
SYMBOL
VCBO
VCEO
VEBO
ICBO
VCE(sat)
Base to Emitter Saturation Voltage
VBE(sat)
Base to Emitter Voltage
DC Current Gain
BC846AW,BC847AW,BC848AW
BC846BW,BC847BW,BC848BW
BC847CW,BC848CW
BC846AW,BC847AW,BC848AW
BC846BW,BC847BW,BC848BW
BC847CW,BC848CW
Transition Frequency
Collector Output Capacitance
BC846AW,BC847AW,BC848AW
Noise Figure
BC846BW,BC847BW,BC848BW
BC847CW,BC848CW
VBE(on)
hFE(1)
hFE(2)
fT
COb
NF
MIN.
80
50
30
65
45
30
6
6
5
-
-
-
-
-
580
-
-
110
200
420
100
-
-
TYP. MAX. UNIT TEST CONDITIONS
- -V
IC = 10 uA, IE = 0
- -V
IC = 10 mA, IB = 0
- -V
IE = 1 μA, IC = 0
- 15 nA
- 0.25
V
- 0.6
0.7 -
0.9 -
V
660 700
mV
- 770
90
150 -
270
220
- 450
800
VCB = 30 V
IC = 10mA, IB = 0.5 mA
IC = 100mA, IB = 5 mA
IC = 10mA, IB = 0.5 mA
IC = 100mA, IB = 5 mA
VCE = 5 V, IC = 2 mA
VCE = 5 V, IC = 10 mA
VCE = 5 V, IC = 10 μA
VCE = 5 V, IC = 2 mA
- - MHz VCE = 5 V, IC = 10 mA, f = 100MHz
- 4.5 pF
VCB = 10 V, f=1MHz
- VCE= 5 V, IC= 0.2 mA,
- 10 dB
f= 1KHz, RS= 2 K,
4 BW= 200Hz
24-Mar-2010 Rev. A
Page 2 of 4


Part Number BC848BW
Description NPN Transistor
Maker SeCoS
PDF Download

BC848BW Datasheet PDF






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