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BCP882J Datasheet Preview

BCP882J Datasheet

NPN Transistor

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Elektronische Bauelemente
BCP882J
3A , 40V
P Plastic-Encapsulate Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Small Flat Package.
High DC Current Gain
Low VCE(sat)
CLASSIFICATION OF hFE
Rank
BCP882J-O BCP882J-Y
BCP882J-GR
SOT-89
123
A
EC
4 1. Base
2. Collector
3. Emitter
Range
100~200
160~320
200~400
PACKAGE INFORMATION
Package
MPQ
SOT-89
1K
Leader Size
7 inch
1
Base
B
F
G
H
J
D
K
L
Collector
2
3
Emitter
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.40
3.94
1.40
4.60
4.25
1.60
2.30 2.60
1.50 1.70
0.89 1.20
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.40 0.58
1.50 TYP
3.00 TYP
0.32 0.52
0.35 0.44
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Continuous Collector Current
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction and Storage Temperature
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ, TSTG
40
30
6
3
500
250
150, -55~150
V
V
V
A
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min
Typ
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off current
Emitter Cut-Off Current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
DC Current Gain
hFE
40
30
6
-
-
-
100
32
-
-
-
-
-
-
-
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
VCE(sat)
VBE(sat)
fT
-
-
-
-
-
50
Max
-
-
-
1
10
1
400
0.5
1.5
-
Unit Test condition
V IC=100µA, IE=0
V IC=10mA, IB=0
V IE=100µA, IC=0
µA VCB=40V, IE=0
µA VCE=30V, IB=0
µA VEB=6V, IC=0
VCE=2V, IC=1A
VCE=2V, IC=100mA
V IC=2A, IB=0.2A
V IC=2A, IB=0.2A
MHz VCE=5V, IC=0.1A, f=10MHz
http://www.SeCoSGmbH.com/
14-Jul-2016 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 2




SeCoS

BCP882J Datasheet Preview

BCP882J Datasheet

NPN Transistor

No Preview Available !

Elektronische Bauelemente
CHARACTERISTIC CURVES
BCP882J
3A , 40V
P Plastic-Encapsulate Transistor
http://www.SeCoSGmbH.com/
14-Jul-2016 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 2


Part Number BCP882J
Description NPN Transistor
Maker SeCoS
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BCP882J Datasheet PDF






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