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CZD1733 - NPN Transistor

General Description

The CZD1733 is designed for power amplifier applications.

Key Features

  • Low VCE(sat) Good hFE linearity REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.20 2.80 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings (TA=25 ) Parameter Symbol Collector to Base Voltage VCBO Collector to Emitter Voltage VCEO Emitter to Base Voltage VEBO Collector Current IC Collector Current (Pulse, Pw=20ms, duty=1/2) Total Device Dissi.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente RoHS Compliant Product Description The CZD1733 is designed for power amplifier applications. CZD1733 NPN Epitaxial Planar General Purpose Transistor TO-252 Features * Low VCE(sat) Good hFE linearity REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.20 2.80 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.