CZD2983J - NPN Epitaxial Planar Silicon Transistor

SeCoS Halbleitertechnologie GmbH

General Description

CZD2983J is designed for power amplifier and driver stage amplifier applications.

Key Features

High transition frequency.

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CZD2983J npn epitaxial planar silicon transistor by SeCoS Halbleitertechnologie GmbH - Datasheet Preview

Datasheet Details

Part number	CZD2983J
Manufacturer	SeCoS Halbleitertechnologie GmbH
File Size	187.47 KB
Description	NPN Epitaxial Planar Silicon Transistor
Datasheet	CZD2983J Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente CZD2983J NPN Epitaxial Planar Silicon Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION CZD2983J is designed for power amplifier and driver stage amplifier applications. D-Pack (TO-252) FEATURES High transition frequency CLASSIFICATION OF hFE Product-Rank CZD2983J-O Range 70~140 PACKAGE INFORMATION Package MPQ TO-252 2.5K A BC D CZD2983J-Y 120~240 Leader Size 13 inch 1 Base GE Collector 2 3 Emitter K HF MJ N O P REF. Millimeter Min. Max. REF. Millimeter Min. Max. A 6.35 6.90 J 2.186 2.386 B 4.95 5.50 K 0.64 1.14 C 2.10 2.50 M 0.50 1.14 D 0.43 0.9 N 1.3 1.8 E 6.0 7.5 O 0 0.13 F 2.90 REF P 0.58REF. G 5.40 6.40 H 0.60 1.