D669 Key Features
- VCE=5V, IC= 150 mA hFE(2)
- VCE=5V, IC= 500mA
- IC=500 mA, IB=50mA
- The 2SD669 and 2SD669A are grouped by hFE1 as follows
- 200 100
- Part: D669
- Manufacturer: SeCoS Halbleitertechnologie GmbH (official site)
- Size: 231.44 KB
Other D669 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Hitachi Semiconductor |
D669 | 2SD669 |
Unisonic Technologies |
D669 | BIPOLAR POWER TRANSISTOR |
SavantIC |
D669 | Silicon NPN Power Transistors |
|
Hitachi Semiconductor |
D669A | 2SD669A |
|
Unisonic Technologies |
D669A | NPN Transistor |
D669 Description
2SD669/2SD669A Elektronische Bauelemente NPN Type Plastic Encapsulate Transistors RoHS pliant Product A suffix of "-C" specifies halogen & lead-free TO-126C.