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SeCoS

DTC114TE Datasheet Preview

DTC114TE Datasheet

NPN Digital Transistors

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Elektronische Bauelemente
DTC114TE/DTC114TUA/DTC114TKA
DTC114TCA/TC114TSA
NPN Digital Transistors (Built-in Resistors)
FEATURES
* Built-in bias resistors enable the configuration of
an inverter circuit without connecting input resistors
* Only the on/off confitions need to be set for operation,
making device design easy.
* The bias resistors consis of thin-film resistors with
compete isolation to allow negative biasing of the
input. They also have the advantage of almost
completely eliminating parasitic effects.
PIN CONNENCTIONS AND MARKING
DTC114TE
SOT-523
(1) Base
(2) Emitter
(3) Collector
Abbreviated symbol: 04
DTC114TKA
(1) Base
(2) Emitter
(3) Collector
SOT-23-3L Abbreviated symbol:04
DTC114TSA
TO-92S
(1) Emitter
(2) Collector
(3) Base
DTC114TUA
SOT-323
(1)(1B)aBsaese
(2)(2E)mEimtteitrter
(3)(3C)oClloelcletocrtor
Abbreviated symbol: 04
DTAC111144ETCA
(1) Base
(1) Base
(2) Emitter
(2) Emitter
(3) Collector
(3) Collector
SOT-23
Abbreviated symbol: 04
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed indivlidua
Page 1 of 2




SeCoS

DTC114TE Datasheet Preview

DTC114TE Datasheet

NPN Digital Transistors

No Preview Available !

Elektronische Bauelemente
DTC114TE/DTC114TUA/DTC114TKA
DTC114TCA/TC114TSA
NPN Digital Transistors (Built-in Resistors)
MAXIMUM RATINGS* TA=25unless otherwise noted
Symbol
Parameter
LIMITS(DTC114T)
E UA KA CA SA
VCBO
Collector-Base Voltage
50
VCEO
VEBO
IC
PC
Tj
Collector-Emitter Voltage
50
Emitter-Base Voltage
5
Collector Current -Continuous
100
Collector Dissipation
150 200 300
Junction temperature
150
TJ, Tstg
Junction and Storage Temperature
ELECTRICAL CHARACTERISTICS (Tamb=25
-55~+150
unless otherwise specified)
Parameter
Symbol
Test conditions
MIN TYP
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
fT
Ic=50µA,IE=0
Ic=1mA,IB=0
IE=50µA,IC=0
VCB=50V,IE=0
VEB=4V,IC=0
VCE=5V,IC=1mA
IC=10mA,IB=1mA
VCE=10V,IE=-5mA, f=100MHz
50
50
5
100 300
250
Imput resistor
R1
7 10
Units
V
V
V
mA
mW
MAX
0.5
0.5
600
0.3
13
UNIT
V
V
V
uA
uA
V
MHz
kΩ
Typical Characteristics
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individua
Page 2 of 2


Part Number DTC114TE
Description NPN Digital Transistors
Maker SeCoS
Total Page 2 Pages
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