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SeCoS

EMZ1 Datasheet Preview

EMZ1 Datasheet

Dual Transistors

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Elektronische Bauelemente
EMZ1
0.15 W, ±150 mA, ±60 V
Silicon Epitaxial Planar
Power Management (Dual Transistors)
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-563
FEATURES
2SA1037AK and 2SC2412K are housed independently in a package.
Transistor elements independent, eliminating interference.
Mounting cost and area can be cut in half.
MARKING AND EQUIVALENT CIRCUIT
654
3 21
CBE
A
B
J
D
CF
GH
E
Z1
123
TR2 TR1
45 6
EB C
REF.
A
B
C
D
E
Millimeter
Min. Max.
1.50 1.70
1.50 1.70
0.525 0.60
1.10 1.30
- 0.05
REF.
F
G
H
J
Millimeter
Min. Max.
0.09 0.16
0.45 0.55
0.17 0.27
0.10 0.30
TR1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current – Continuous
Collector Power Dissipation
Junction & Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
60
50
7
0.15
0.15
150, -55~150
V
V
V
A
W
TR1 NPN ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT
TEST CONDITIONS
Collector-Base Breakdown Voltage
V(BR)CBO
60
-
-
V IC=50µA, IE=0
Collector-Emitter Breakdown Voltage
V(BR)CEO
50
-
-
V IC=1mA, IB=0
Emitter-Base Breakdown Voltage
V(BR)EBO
7
-
-
V IE=50µA, IC=0
Collector Cut-Off Current
ICBO - - 0.1 µA VCB=60V, IE=0
Emitter Cut-Off Current
IEBO - - 0.1 µA VEB=7V, IC=0
DC Current Gain
hFE 120 - 560
VCE=6V, IC=1mA
Collector-Emitter Saturation Voltage
VCE(sat)
-
-
0.4
V IC=50mA, IB=5mA
Transition Frequency
fT - 180 - MHz VCE=12V, IC=2mA, f=100MHz
Collector Output Capacitance
Cob
- 2.0 3.5
pF VCB=12V, IE=0, f=1MHz
TR2 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current – Continuous
Collector Power Dissipation
Junction & Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
-60
-50
-6
-0.15
0.15
150, -55~150
V
V
V
A
W
TR2 PNP ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT
TEST CONDITIONS
Collector-Base Breakdown Voltage
V(BR)CBO
-60
-
-
V IC=-50µA, IE=0
Collector-Emitter Breakdown Voltage
V(BR)CEO
-50
-
-
V IC=-1mA, IB=0
Emitter-Base Breakdown Voltage
V(BR)EBO
-6
-
-
V IE=-50µA, IC=0
Collector Cut-Off Current
ICBO - - -0.1 µA VCB=-60V, IE=0
Emitter Cut-Off Current
IEBO - - -0.1 µA VEB=-6V, IC=0
DC Current Gain
hFE 120 - 560
VCE=-6V, IC=-1mA
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
VCE(sat)
fT
Cob
- - -0.5 V IC=-50mA, IB=-5mA
- 140 - MHz VCE=-12V, IC=-2mA, f=100MHz
- - 5 pF VCB=-12V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
28-Oct-2009 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 4




SeCoS

EMZ1 Datasheet Preview

EMZ1 Datasheet

Dual Transistors

No Preview Available !

Elektronische Bauelemente
TYPICAL CHARACTERISTICS
TR1 (NPN)
EMZ1
0.15 W, ±150 mA, ±60 V
Silicon Epitaxial Planar
Power Management (Dual Transistors)
http://www.SeCoSGmbH.com/
28-Oct-2009 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 4


Part Number EMZ1
Description Dual Transistors
Maker SeCoS
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EMZ1 Datasheet PDF






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