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MMDT3904V - DUAL NPN TRANSISTOR

Key Features

  • Epitaxial Planar Die Construction Ideal for Low Power amplification and Switching SOT-563 A.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente MMDT3904V 0.2A, 60V Dual P Plastic-Encapsulated Transistors RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Epitaxial Planar Die Construction Ideal for Low Power amplification and Switching SOT-563 A MARKING KAP PACKAGE INFORMATION Package MPQ SOT-563 3K Leader Size 7 inch MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current–Continuous Collector Power Dissipation Junction & Storage temperature VCBO VCEO VEBO IC PC TJ, TSTG B J D CF GH E REF. A B C D E Millimeter Min. Max. 1.50 1.50 0.525 1.70 1.70 0.60 1.10 1.30 - 0.05 REF. F G H J Millimeter Min. Max. 0.09 0.16 0.45 0.55 0.17 0.27 0.10 0.