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SBESD24C-C Datasheet Preview

SBESD24C-C Datasheet

Bi-Direction ESD Protection Diode

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Elektronische Bauelemente
SBESD24C-C
275W, 24V
Bi-Direction ESD Protection Diode
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
Designed to protect voltage sensitive electronic
components from ESD and other transients.
Excellent clamping capability, low leakage, low
capacitance, and fast response time ,make these
parts ideal for ESD protection on designs where board
space is at a premium. Because of its small size, it is
suited for use in digital cameras, cellular phones,
MP3 players and many other portable applications where
board space is at a premium.
DFN1006
FEATURES
Bi-directional ESD protection of one line
Low capacitance
Fast response time
JESD22-A114-B ESD Rating of class 3B per human body model
IEC 61000-4-2 Level 4 ESD protection
MARKING
PACKAGE INFORMATION
Package
MPQ
DFN1006
10K
Leader Size
7 inch
REF.
A
B
C
D
Millimeter
Min. Max.
0.95 1.08
0.55 0.68
0.4 0.55
0.07 0.17
REF.
E
F
G
H
Millimeter
Min. Max.
0.65BSC
0.4 0.6
0.2 0.3
0.2 0.3
ORDER INFORMATION
Part Number
Type
SBESD24C-C
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted.)
Parameter
Symbol
ESD per IEC 61000−4−2
JESD22-A114-B ESD Voltage
Air
Contact
Per Human Body Model
Machine Model
VESD 1
Peak Pulse Power @tp=8/20µs
PPP
Peak Pulse Current @tp=8/20µs
IPP
Maximum Lead Solder Temperature(10 Second Duration)
TL
Operating Junction and Storage Temperature Range
TJ, TSTG
Ratings
±30
±30
±16
±0.4
275
5
260
150, -55~150
Unit
kV
W
A
°C
°C
http://www.SeCoSGmbH.com/
10-Apr-2020 Rev. C
Any changes of specification will not be informed individually.
Page 1 of 3




SeCoS

SBESD24C-C Datasheet Preview

SBESD24C-C Datasheet

Bi-Direction ESD Protection Diode

No Preview Available !

Elektronische Bauelemente
SBESD24C-C
275W, 24V
Bi-Direction ESD Protection Diode
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted.)
Parameter
Symbol
Min.
Reverse Stand-Off Voltage
Reverse Breakdown Voltage @IT=1mA
VRWM
VBR
-
26.7
Reverse Leakage Current @VRWM=24V
IR
-
Clamping Voltage @IPP=1A
VC -
Junction Capacitance @VR=0, f=1MHz
CJ
Note:
1. Device stressed with ten non-repetitive ESD pulses.
-
ELECTRICAL PARAMETER
Typ.
-
-
-
35
20
Max.
24
-
0.2
-
-
Unit
V
V
µA
V
pF
ESD STANDARDS COMPLIANCE
http://www.SeCoSGmbH.com/
10-Apr-2020 Rev. C
Any changes of specification will not be informed individually.
Page 2 of 3


Part Number SBESD24C-C
Description Bi-Direction ESD Protection Diode
Maker SeCoS
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