900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






SeCoS

SBESD5411N Datasheet Preview

SBESD5411N Datasheet

Bi-directional Transient Voltage Suppressors

No Preview Available !

Elektronische Bauelemente
SBESD5411
70W, 7V
Bi-directional Transient Voltage Suppressors
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
SBESD5411N is a bi-directional Transient Voltage
Suppressor (TVS). It is specifically designed to protect
sensitive electronic components which are connected to
low speed data lines and control lines from over-stress
caused by ESD (Electrostatic Discharge), EFT (Electrical
Fast Transients) and lighting.
SBESD5411N may be used to provide ESD protection
up to ±30kV (contact and air discharge) according to
IEC 61000-4-2 and withstand peak pulse current up to
6A (8/20µs) according to IEC 61000-4-5.
DFN1006-2L
FEATURES
Low clamping voltage
Ultra-low leakage current
Solid-state silicon technology
APPLICATIONS
Tablets
Laptops
Other portable devices
REF.
A
B
C
D
Millimeter
Min. Max.
0.95 1.05
0.55 0.65
0.2 0.3
0.45 0.55
REF.
E
F
G
Millimeter
Min. Max.
0.65 TYP.
0.3 0.4
0.00 0.05
MARKING
G = Date Code
PACKAGE INFORMATION
Package
MPQ
DFN1006-2L
10K
Leader Size
7 inch
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Rating
Symbol
IEC 61000-4-2
Air discharge
Contact discharge
VESD
Peak Pulse Power@ tp=8/20µs
PPK
Peak Pulse Current@ tp=8/20µs
Operating Temperature
Lead Temperature
IPP
TOP
TL
Junction and Storage Temperature Range
TJ, TSTG
Value
±30
±30
70
6
-40~85
260
125, -55~150
Unit
kV
W
A
°C
°C
°C
http://www.SeCoSGmbH.com/
15-Jul-2016 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4




SeCoS

SBESD5411N Datasheet Preview

SBESD5411N Datasheet

Bi-directional Transient Voltage Suppressors

No Preview Available !

Elektronische Bauelemente
SBESD5411
70W, 7V
Bi-directional Transient Voltage Suppressors
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Maximum Reverse Working Voltage
VRWM
- -7
Reverse Leakage Current
IR VRWM=7V
- 5 100
Reverse Breakdown Voltage
VBR IT=1mA
7.2 - 10.5
Reverse Holding Voltage
Clamping Voltage 1
Clamping Voltage 2
VHOLD
VC
VC
IHOLD=50mA
IPP=16A, tp=100ns
VESD=8kV
7.2
-
-
- 10.5
12 -
12 -
Clamping Voltage 3
IPP=1A, tp=8/20µs
VC
IPP=6A, tp=8/20µs
-
-
- 10
- 12
Dynamic Resistance
RDYN
- 0.24 -
Junction Capacitance
VR=0, f=1MHz
CJ
VR=7V, f=1MHz
- 17.5 22
- 11.5 16
Notes:
1. TLP parameters: Z0=50Ω, tp=100ns, tr=2ns, average window moves from 60ns to 80ns. RDYN is calculated from 10A to 30A.
2. According to IEC61000-4-2, contact discharge mode.
3. According to IEC61000-4-5, non-repetitive pulse current.
CHARACTERISTICS CURVES (TA=25°C unless otherwise specified)
Unit
V
nA
V
V
V
V
V
V
pF
http://www.SeCoSGmbH.com/
15-Jul-2016 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4


Part Number SBESD5411N
Description Bi-directional Transient Voltage Suppressors
Maker SeCoS
Total Page 4 Pages
PDF Download

SBESD5411N Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 SBESD5411N Bi-directional Transient Voltage Suppressors
SeCoS





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy