SBL30U60D - MOS Barrier Schottky Rectifier

SeCoS Halbleitertechnologie GmbH

Key Features

Planar MOS Schottky technology Low forward voltage drop High current capability High reliability High surge current capability Epitaxial construction TO-263(D2-PACK).

SBL30U60D mos barrier schottky rectifier by SeCoS Halbleitertechnologie GmbH - Datasheet Preview

Datasheet Details

Part number	SBL30U60D
Manufacturer	SeCoS Halbleitertechnologie GmbH
File Size	261.25 KB
Description	MOS Barrier Schottky Rectifier
Datasheet	SBL30U60D Datasheet

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Other Datasheets by SeCoS Halbleitertechnologie GmbH

Part Number	Description
SBL30U100	Schottky Rectifier
SBL30U120	Low VF Trench Barrier Schottky Rectifier
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Full PDF Text Transcription (Reference)

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Elektronische Bauelemente SBL30U60D Voltage 60V,30 Amp Low VF Planar MOS Barrier Schottky Rectifier RoHS Compliant Product A suffix of “-C” specifies halogen free FEATURES Planar MOS Schottky technology Low forward voltage drop High current capability High reliability High surge current capability Epitaxial construction TO-263(D2-PACK) MECHANICAL DATA Case: Molded plastic Epoxy: UL94V-0 rate flame retardant Lead: Lead solderable per MIL-STD-202 method 208 guaranteed Polarity: As Marked Mounting position: Any PACKAGE INFORMATION Package MPQ TO-263 0.8K Leader Size 13 inch 1 3 REF. Millimeter Min. Max. REF. Millimeter Min. Max. A 4.00 4.87 c2 1.07 1.65 b 0.51 1.01 b2 1.34 REF 2 L4 0.00 0.30 C 0.30 0.74 D e 8.0 9.65 2.54 REF L3 1.50 REF L 14.6 16.1 L1 2.5 REF L2 1.