| Part Number | SCG2019 |
| Manufacturer | SeCoS |
| Title | P-Channel Enhancement Mode MOSFET |
| Description | These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat ... |
| Features |
Gate – Source Voltage Continuous Drain Current 1 TA= 25°C TA= 70°C Power Dissipation 1 TA= 25°C TA= 70°C Continuous Drain Current 2 TA= 25°C TA= 70°C Power Dissipation 2 Pulsed Drain Current 3 TA= 25°C TA= 70°C Lead Temperature Operating ... |
| Datasheet |
 SCG2019 Datasheet 696.10KB |
