Datasheet Details
| Part number | SCG2019 |
|---|---|
| Manufacturer | SeCoS Halbleitertechnologie GmbH |
| File Size | 696.10 KB |
| Description | P-Channel Enhancement Mode MOSFET |
| Download | SCG2019 Download (PDF) |
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| Part number | SCG2019 |
|---|---|
| Manufacturer | SeCoS Halbleitertechnologie GmbH |
| File Size | 696.10 KB |
| Description | P-Channel Enhancement Mode MOSFET |
| Download | SCG2019 Download (PDF) |
|
|
|
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.
MECHANICAL DATA Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage APPLICATION DC-DC converter circuit Load Switch MARKING P9 = Date Code PACKAGE INFORMATION Package MPQ SOT-523 3K Leader Size 7 inch SOT-523 A M 3 Top View CB 1 2 K L E 3 1 2 D F G H J REF.
A B C D E F Millimeter Min.
Elektronische Bauelemente SCG2019 -0.62A , -20V , RDS(ON) 810 m P-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and.
| Part Number | Description |
|---|---|
| SCG2035-C | N-Ch Enhancement Mode Power MOSFET |
| SCG3019 | N-Channel MOSFET |
| SCG3139K-C | P-Channel Enhancement Mode Power MOSFET |
| SCG4153 | N-Channel Enhancement Mode MOSFET |
| SCG7002K-C | N-Ch Enhancement Mode Power MOSFET |
| SCGS358J-C | Low Power Dual Operational Amplifiers |