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SCP35N03J-C - N-Channel Enhancement Mode Power MOSFET

Description

SCP35N03J-C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

  • High density cell design for ultra low RDS(ON).
  • Fully Characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special processing technology for high ESD capability.

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Datasheet Details

Part number SCP35N03J-C
Manufacturer SeCoS
File Size 277.26 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet SCP35N03J-C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SCP35N03J-C 35A, 30V, RDS(ON) 7mļ— N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of ā€œ-Cā€ specifies halogen & lead-free DESCRIPTION SCP35N03J-C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
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