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SCP35N03J-C SeCoS N-Channel Enhancement Mode Power MOSFET

Title
Description SCP35N03J-C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications DFN3x3-8J FEATURES  High density cell design for ultra low RDS(ON)  Fully Characterized avalanche voltage and current  Good stability and uniformity with high EAS  Excellent package for good heat dissipation  Special processing technology...
Features
 High density cell design for ultra low RDS(ON)
 Fully Characterized avalanche voltage and current
 Good stability and uniformity with high EAS
 Excellent package for good heat dissipation
 Special processing technology for high ESD capability APPLICATIONS
 High side switch in POL DC/DC converter
 Secondary side synchronous rectifier MARKING...

Datasheet PDF File SCP35N03J-C Datasheet - 277.26KB
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SCP35N03J-C   SCP35N03J-C   SCP35N03J-C  



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