SCP35N03J-C
Description
SCP35N03J-C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
Key Features
- High density cell design for ultra low RDS(ON)
- Fully Characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special processing technology for high ESD capability
Applications
- High side switch in POL DC/DC converter
