SCP35N03J-C mosfet equivalent, n-channel enhancement mode power mosfet.
* High density cell design for ultra low RDS(ON)
* Fully Characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excel.
DFN3x3-8J
FEATURES
* High density cell design for ultra low RDS(ON)
* Fully Characterized avalanche voltage an.
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