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SDT517 Datasheet Preview

SDT517 Datasheet

Dual MOSFET

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Elektronische Bauelemente
SDT517
N & P-Ch Enhancement Mode MOSFET
N-Ch: 6A, 12V, RDS(ON) 24 m
P-Ch: -4.1A, -12V, RDS(ON) 45 m
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
FEATURES
Surface Mount Package
Super High Density Cell Design for
Extremely Low RDS(ON)
Exceptional On-resistance and
Maximum DC Current Capability
DFN2x2-6L-J
APPLICATIONS
Power Management In Note Book
Portable Equipment
DC/DC Converter
Load Switch
MARKING
517
Date Code
PACKAGE INFORMATION
Package
MPQ
DFN2×2-6L-J
3K
Leader Size
7 inch
REF.
A
B
C
D
E
F
Millimeter
Min. Typ. Max.
2.00 BSC.
2.00 BSC.
0.675 0.75
0.80
0.30 Typ.
0.75 0.86 1.1
0.65BSC
REF.
G
H
J
K
L
P
Millimeter
Min. Typ. Max.
0.30 BSC
0.20 BSC
0 -- 0.06
0.15 0.20 0.25
0.20 0.30 0.38
0.52 0.65 0.72
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current 1
VGS
ID
Pulsed Drain Current(tp=10us)
IDM
Continous Source-Drain Diode Current
Lead Temperature for Soldering Purposes
(1/8’’ from case for 10 s)
IS
TL
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Rating
Maximum Thermal Resistance from Junction to Ambient 1
RθJA
N-ch
12
±12
6
24
6
Rating
P-ch
-12
±12
-4.1
-16.4
-4.1
260
150, -55~150
167
Unit
V
V
A
A
A
°C
°C
°C / W
http://www.SeCoSGmbH.com/
12-Sep-2017 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 5




SeCoS

SDT517 Datasheet Preview

SDT517 Datasheet

Dual MOSFET

No Preview Available !

Elektronische Bauelemente
SDT517
N & P-Ch Enhancement Mode MOSFET
N-Ch: 6A, 12V, RDS(ON) 24 m
P-Ch: -4.1A, -12V, RDS(ON) 45 m
N-CH ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)
Parameter
Symbol
Min
Typ
Max
Static Characteristics
Drain-Source Breakdown Voltage
BVDSS
12
-
-
Zero Gate Voltage Drain Current
IDSS
-
-
1
Gate-Body Leakage Current
Gate-Threshold Voltage 2
IGSS
VGS(th)
-
0.5
- ±100
-1
- - 24
Drain-Source On-Resistance 2
RDS(ON)
-
-
- 27
- 42
Forward Transfer conductance 2
gFS
-
4
- 74
--
Diode forward voltage
VSD - - 1
Dynamic Characteristics
Input Capacitance
Ciss - 630 -
Output Capacitance
Coss - 164 -
Reverse Transfer Capacitance
Crss - 137 -
Switching Characteristics 3
Turn-On Delay Time
Td(ON)
-
5.5
-
Rise Time
Tr - 14 -
Turn-Off Delay Time
Td(OFF)
-
29
-
Fall Time
Tf - 10.2 -
Total Gate Charge
Qg - 12 -
Gate-Source Charge
Qgs - 1 -
Gate-Drain Charge
Qgd - 2 -
Unit Test Condition
V VGS=0, ID=250µA
µA VDS=16V, VGS=0
nA VDS=0,VGS= ±12V
V VDS=VGS, ID=250µA
VGS=10V, ID=6A
VGS=4.5V, ID=5A
m
VGS=2.5V, ID=4A
VGS=1.8V, ID=2A
S VDS=5V, ID=3.8A
V IS=1A, VGS=0V
VDS=10V
pF VGS=0
f=1MHz
VDS=10V
nS VGS=5V
RG=6
RL=1.7
VDS=10V
nC VGS=10V
ID=6A
http://www.SeCoSGmbH.com/
12-Sep-2017 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 5


Part Number SDT517
Description Dual MOSFET
Maker SeCoS
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