SID15N10 mosfet equivalent, n-channel mosfet.
RDS(on) ≦ 100mΩ @ VGS = 10V Super high density cell design for extremely low RDS(on) Exceptional on-resistance and maximum DC current capability
MARKING
15N10
Date Code.
The device is suited for charger, industrial and consumer environment.
FEATURES
RDS(on) ≦ 100mΩ @ VGS = 10V Super high .
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