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SID15N10 - N-Channel MOSFET

General Description

The SID15N10 provide the designer with the best combination of fast switching.

The TO-251 package is universally preferred for all commercial-industrial surface mount applications.

The device is suited for charger, industrial and consumer environment.

Key Features

  • RDS(on) ≦ 100mΩ @ VGS = 10V Super high density cell design for extremely low RDS(on) Exceptional on-resistance and maximum DC current capability.

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Datasheet Details

Part number SID15N10
Manufacturer SeCoS
File Size 752.70 KB
Description N-Channel MOSFET
Datasheet download datasheet SID15N10 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SID15N10 15A, 100V, RDS(ON) 110mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SID15N10 provide the designer with the best combination of fast switching. The TO-251 package is universally preferred for all commercial-industrial surface mount applications. The device is suited for charger, industrial and consumer environment. FEATURES RDS(on) ≦ 100mΩ @ VGS = 10V Super high density cell design for extremely low RDS(on) Exceptional on-resistance and maximum DC current capability MARKING 15N10 Date Code PACKAGE INFORMATION Package MPQ TO-251 2.5K Leader Size 13’ inch TO-251 A B GE K F C D H MJ P REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 2.20 2.40 0.45 0.55 6.80 7.