Elektronische Bauelemente
SMG2007-C
-7.2A , -20V , RDS(O ) 19mΩ
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
-20
-
- V VGS=0, ID= -250uA
Gate-Source Threshold Voltage
Forward Transconductance
VGS(th)
gfs
-0.3
-
-
19.1
-0.9 V VDS=VGS, ID= -250uA
- S VDS= -5V, ID= -4.5A
Gate-Body Leakage Current
Drain-Source Leakage Current
IGSS
IDSS
Drain-Source On-Resistance
RDS(ON)
-
-
-
-
-
-
-
±100
nA VDS=0,VGS= ±12V
- -1
VDS= -20V, VGS=0,TJ =25°C
µA
- -5
VDS= -20V, VGS=0,TJ =55°C
- 19
VGS= -4.5V, ID= -4A
- 25 mΩ VGS= -2.5V, ID= -2A
- 30
VGS= -1.8V, ID= -1A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg - 24.5 -
VDS= -10V,
Qgs - 2.9 - nC VGS= -4.5V,
Qgd - 4.9 -
ID= -4.5A
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current 1
Pulsed Source Current 3
Forward On Voltage 4
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
IS
ISM
VSD
- 6.8
- 26.6
- 222.8
- 115.4
- 2100
- 213
- 166
Source-Drain Diode
--
-
-
-
-
-
-
-
-1.7
-10
-1.2
VDS= -10V,
VGS= -4.5V,
nS ID= -1A,
RG=6Ω,
RL=10Ω
VDS= -10V,
pF VGS=0,
f=1.0MHz
A
A
V IS= -1.7A, VGS=0V
Reverse Recovery Time
Trr - 67.5 -
Reverse Recovery Charge
Qrr - 51.6 -
Notes:
1. Surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. When mounted on Min. copper pad.
3. Pulse width limited by maximum junction temperature , Pulse Width ≤300µs, Duty Cycle≤2%.
4. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
ns
nC
IS= -1.7A, VGS=0V
dI/dt=100A/µs
http://www.SeCoSGmbH.com/
14-Dec-2017 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4
