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SMG2340N - N-Channel MosFET

Description

These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and ensure minimal power loss and heat dissipation.

Features

  • Low RDS(on) provides higher efficiency and extends battery life.
  • Low thermal impedance copper leadframe SC-59 saves board Space.
  • Fast switching speed.
  • High performance trench technology. SC-59 A L 3 Top View CB 12 KE 1 D F GH 3 2 J REF. A B C D E F Millimeter Min. 2.70 2.25 1.30 1.00 Max. 3.10 3.00 1.70 1.40 1.70 2.30 0.35 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15.

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Datasheet preview – SMG2340N

Datasheet Details

Part number SMG2340N
Manufacturer SeCoS
File Size 137.86 KB
Description N-Channel MosFET
Datasheet download datasheet SMG2340N Datasheet
Additional preview pages of the SMG2340N datasheet.

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Full PDF Text Transcription

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Elektronische Bauelemente SMG2340N 5.2 A, 40 V, RDS(ON) 43 m N-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printer , PCMCIA cards, cellular and cordless telephones. FEATURES  Low RDS(on) provides higher efficiency and extends battery life.  Low thermal impedance copper leadframe SC-59 saves board Space.  Fast switching speed.  High performance trench technology. SC-59 A L 3 Top View CB 12 KE 1 D F GH 3 2 J REF.
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