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SMG2342N - N-Channel MosFET

Description

These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss heat dissipation.

Features

  • Low RDS(on) provides higher efficiency and extends battery life.
  • Low thermal impedance copper leadframe SC-59 saves board Space.
  • Fast switching speed.
  • High performance trench technology.

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Datasheet preview – SMG2342N

Datasheet Details

Part number SMG2342N
Manufacturer SeCoS
File Size 137.92 KB
Description N-Channel MosFET
Datasheet download datasheet SMG2342N Datasheet
Additional preview pages of the SMG2342N datasheet.

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Full PDF Text Transcription

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Elektronische Bauelemente SMG2342N 5.2 A, 40 V, RDS(ON) 86 m N-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printer , PCMCIA cards, cellular and cordless telephones. FEATURES  Low RDS(on) provides higher efficiency and extends battery life.  Low thermal impedance copper leadframe SC-59 saves board Space.  Fast switching speed.  High performance trench technology.
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