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SMG2345P - P-Channel MosFET

Description

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.

Features

  • Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SC-59 saves board space. Fast switching speed. High performance trench technology.

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Datasheet preview – SMG2345P

Datasheet Details

Part number SMG2345P
Manufacturer SeCoS
File Size 65.96 KB
Description P-Channel MosFET
Datasheet download datasheet SMG2345P Datasheet
Additional preview pages of the SMG2345P datasheet.

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Full PDF Text Transcription

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Elektronische Bauelemente SMG2345P -3.2A , -40V , RDS(ON) 164 mΩ P-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SC-59 saves board space. Fast switching speed. High performance trench technology. APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. SC-59 A L 3 Top View CB 12 KE 1 D F GH 3 2 J REF. A B C D E F Millimeter Min. Max. 2.
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