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SMS2305R Datasheet Preview

SMS2305R Datasheet

P-Channel MOSFET

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Elektronische Bauelemente
SMS2305R
-4.1A, -20V, RDS(O ) 52 m
P-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTIONS
The device uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltage as low as 2.5V. This device is suitable for the use
as a load switch or in PWM applications.
FEATURES
High power and current handing capability
Lead free product is available
Surface mount package
SOT-23
A
L
3
Top View
CB
12
KE
1
D
F GH
3
2
J
APPLICATIONS
PWM applications
Load switch
Power management
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.10 2.95
1.20 1.7
0.89 1.3
1.70 2.3
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.01 0.18
0.5 Typ.
0.08 0.20
0.6 REF.
0.95 BSC.
MARKING
2305
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
Leader Size
7 inch
1
3
2
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Continuous Gate-Source Voltage
TC=25°C
VGS
Continuous Drain Current
TC=70°C
TA=25°C
Pulsed Drain Current 1
TA=70°C
Maximum Power Dissipation
Thermal Resistance from Junction to Ambient 2
Junction and Storage Temperature Range
ID
IDM
PD
RθJA
TJ, TSTG
Rating
-20
±12
-4.1
-3.2
-3
-2.3
-15
1.7
74
-55~150
Unit
V
V
A
A
W
°C / W
°C
http://www.SeCoSGmbH.com/
05-Aug-2016 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4




SeCoS

SMS2305R Datasheet Preview

SMS2305R Datasheet

P-Channel MOSFET

No Preview Available !

Elektronische Bauelemente
SMS2305R
-4.1A, -20V, RDS(O ) 52 m
P-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
-20
-
-
Zero Gate Voltage Drain Current
IDSS
-
- -1
Gate-Source Leakage Current
IGSS
-
-
On Characteristics 3
±100
Gate-Source Threshold Voltage
VGS(th)
-0.45
-0.7
-1
Static Drain-Source On Resistance
RDS(ON)
-
-
39 52
58 75
Forward Transconductance
gFS 6
-
Dynamic Characteristics
-
Input Capacitance
Output Capacitance
Ciss - 740 -
Coss - 290 -
Reverse Transfer Capacitance
Crss - 190
Switching Characteristics
-
Turn-On Delay Time
Td(on)
-
12
-
Rise Time
Tr - 35 -
Turn-Off Delay Time
Td(off)
-
30
-
Fall Time
Tf - 10 -
Total Gate Charge
Qg - 7.8 -
Gate-Source Charge
Qgs - 1.2 -
Gate-Drain (“Miller”) Charge
Qgd - 1.6 -
Source-Drain Diode Characteristics
Continuous Current 2
IS -
-
Forward Voltage 3
VSD -
-
Notes:
1. Repetitive Rating: Pulse width is limited by maximum junction temperature.
2. Surface mounted on a 1 inch2 copper pad of a FR4 board and t10sec.
3. Pulse Test: Pulse width300µs, duty cycle2%.
-1.6
-1.2
Unit Test Condition
V VGS=0, ID= -250µA
µA VDS= -20V, VGS=0
nA VGS=±12V, VDS=0
V VDS=VGS, ID= -250µA
VGS= -4.5V, ID= -4.1A
mΩ
VGS= -2.5V, ID= -3A
S VDS= -5V, ID= -2A
VDS= -4V
pF VGS=0
f=1MHz
VDD= -4V
VGEN= -4.5V
nS ID= -3.3A
RL=1.2Ω
RG=1Ω
VDS= -4V
nC VGS= -4.5V
ID= -4.1A
A
V IS= -1.6A, VGS=0
http://www.SeCoSGmbH.com/
05-Aug-2016 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4


Part Number SMS2305R
Description P-Channel MOSFET
Maker SeCoS
Total Page 4 Pages
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