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SMS2321 Datasheet Preview

SMS2321 Datasheet

P-Channel MOSFET

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Elektronische Bauelemente
SMS2321
-2.9A, -20V, RDS(ON) 57 m
P-Channel Enhancement MOSFET
FEATURES
TrenchFET power MOSFET
APPLICATIONS
PA switch
Load switch
MARKING
S21
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
Leader Size
7 inch
SOT-23
A
L
3
Top View
CB
12
KE
1
3
2
D
F GH J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.10 2.65
1.20 1.40
0.89 1.17
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.09 0.18
0.35 0.65
0.08 0.20
0.6 REF.
0.95 BSC.
1
3
2
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
Continuous Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Thermal Resistance from Junction to Ambient
Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
PD
RθJA
TJ, TSTG
Rating
-20
±12
-2.9
-12
-0.59
0.35
357
150, -50~150
Unit
V
V
A
A
A
W
°C/W
°C
http://www.SeCoSGmbH.com/
26-May-2016 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 3




SeCoS

SMS2321 Datasheet Preview

SMS2321 Datasheet

P-Channel MOSFET

No Preview Available !

Elektronische Bauelemente
SMS2321
-2.9A, -20V, RDS(ON) 57 m
P-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Static Characteristics
Drain-Source Breakdown Voltage
BVDSS
-20
-
-
Zero Gate Voltage Drain Current
IDSS
-
- -1
Gate-Source Leakage Current
IGSS
-
- ±100
Gate-Source Threshold Voltage
VGS(th)
-0.4
-
-0.9
- - 57
Static Drain-Source On Resistance
RDS(ON)
-
- 76
- - 110
Forward Transconductance
gFS - 3 -
Forward Voltage
VSD -
-
Dynamic Characteristics 1
-1.2
Input Capacitance
Ciss - 715 -
Output Capacitance
Coss - 170 -
Reverse Transfer Capacitance
Crss - 120 -
Total Gate Charge
Qg - 13 -
Gate-Source Charge
Qgs - 1.2 -
Gate-Drain (“Miller”) Charge
Qgd - 2.2
Switching Characteristics 1
-
Turn-On Delay Time
Td(on)
-
25
-
Rise Time
Tr - 55 -
Turn-Off Delay Time
Td(off)
-
90
-
Fall Time
Tf - 60 -
Notes:
1. Pulse Test: Pulse width300µs, duty cycle2%.
Unit Test Condition
V VGS=0, ID= -10µA
µA VDS= -16V, VGS=0
nA VGS=±12V, VDS=0
V VDS=VGS, ID= -250µA
VGS= -4.5V, ID= -3.3A
mVGS= -2.5V, ID= -2.8A
VGS= -1.8V, ID= -2.3A
S VDS= -5V, ID= -3.3A
V IS= -1.6A, VGS=0
VDS= -6V
pF VGS=0
f=1MHz
VDS= -6V
nC VGS= -4.5V
ID= -3.3A
VGEN= -4.5V
VDD= -6V
nS RG=6
RL=6
ID= -1A
http://www.SeCoSGmbH.com/
26-May-2016 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 3


Part Number SMS2321
Description P-Channel MOSFET
Maker SeCoS
Total Page 3 Pages
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