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SMS3024A-C Datasheet Preview

SMS3024A-C Datasheet

N-CHANNEL MOSFET

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Elektronische Bauelemente
SMS3024A-C
4.5A , 30V , RDS(O ) 30m
-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SMS3024A-C is the highest performance trench
N-ch MOSFETs with extreme high cell density, which
provide excellent RDS(ON) and gate charge for most of
the small power switching and load switch applications.
The SMS3024A-C meet the RoHS and Green Product
requirement with full function reliability approved.
FEATURES
Advanced high cell density Trench technology
Super Low Gate Charge
Green Device Available
MARKING
3024A
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
Leader Size
7 inch
SOT-23
A
L
3
Top View C B
1
2
K
E
3
1
2
D
F
G
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.80 3.00
2.25 2.55
1.20 1.40
0.90 1.15
1.80 2.0
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0
0.10
0.55 REF
0.80 0.15
0.6 REF.
0.95TYP
ORDER INFORMATION
Part Number
Type
SMS3024A-C
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current 1 @VGS=10V
TA=25°C
ID
TA=70°C
Pulsed Drain Current 3
IDM
Total Power Dissipation
TA=25°C
PD
Operating Junction & Storage Temperature Range
TJ, TSTG
Thermal Resistance Ratings
Thermal Resistance Junction-Ambient 1
RθJA
Thermal Resistance Junction-Ambient 2
Rating
30
±20
4.5
3.6
30
1
-55~150
t5sec, 125
Steady State, 250
313
Unit
V
V
A
A
W
°C
°C / W
http://www.SeCoSGmbH.com/
12-Nov-2019 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4




SeCoS

SMS3024A-C Datasheet Preview

SMS3024A-C Datasheet

N-CHANNEL MOSFET

No Preview Available !

Elektronische Bauelemente
SMS3024A-C
4.5A , 30V , RDS(O ) 30m
-Channel Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ.
Max.
Drain-Source Breakdown Voltage
V(BR)DSS
30
-
-
Gate-Threshold Voltage
Gate-Source Leakage Current
VGS(th)
1
IGSS
-
-
2.5
-
±100
TJ=25°C
-
-
1
Drain-Source Leakage Current
IDSS
TJ=55°C
-
-
5
Static Drain-Source On-Resistance 4
-
RDS(ON)
-
-
30
-
42
Forward Transconductance
Total Gate Charge
gfs
-
5
-
Qg
-
6
-
Gate Source Charge
Gate Drain Charge
Turn-on Delay Time
Qgs
-
2.5
-
Qgd
-
2.1
-
Td(on)
-
2.4
-
Rise Time
Turn-off Delay Time
Tr
-
7.8
-
Td(off)
-
22
-
Fall Time
Input Capacitance
Tf
-
4
-
Ciss
-
572
-
Output Capacitance
Coss
-
81
-
Reverse Transfer Capacitance
Crss
-
65
-
Source-Drain Diode
Continuous Source Current 1
Pulsed Source Current 3
Forward On Voltage 4
IS
-
ISM
-
VSD
-
-
4.5
-
30
-
1.2
Reverse Recovery Time
trr
-
19
-
Reverse Recovery Charge
Qrr
-
1.04
-
Notes:
1.
2.
3.
4.
Surface Mounted on 1” x 1” FR4 Board with 2OZ copper.
When mounted on Min. copper pad.
Pulse width limited by maximum junction temperature, Pulse Width≤ 300µs, Duty Cycle≤ 2%.
Pulse Test : Pulse Width≤300µs, Duty Cycle≤ 2%.
Unit
V
V
nA
µA
mΩ
S
Test Conditions
VGS=0V, ID=250µA
VDS=VGS, ID=250µA
VGS=±20V
VDS=24V, VGS=0V
VDS=24V, VGS=0V
VGS=10V, ID=4.5A
VGS=4.5V, ID=4A
VDS=5V, ID=4.5A
VGS=4.5V
nC VDS=15V
ID=4.5A
VDS=15V
nS VGS=10V
RG=3.3Ω
ID=4.5A
VGS=0V
pF VDS=15V
f=1MHz
A
A
V IS=1A, VGS=0, TJ=25°C
nS IF=4A, dI/dt=100A/µs
nC TJ=25°C
http://www.SeCoSGmbH.com/
12-Nov-2019 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4



Part Number SMS3024A-C
Description N-CHANNEL MOSFET
Maker SeCoS
Total Page 3 Pages
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