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SMS3400Y-C Datasheet Preview

SMS3400Y-C Datasheet

N-CHANNEL MOSFET

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Elektronische Bauelemente
SMS3400Y-C
5.6A , 30V , RDS(O ) 27m
-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SMS3400Y-C provide the designer with the best
combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness. The SOT-23 package
is universally preferred for all commercial-industrial surface
mount applications and suited for low voltage applications
such as DC/DC converters.
FEATURES
Lower Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
MARKING
3400.
SOT-23
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.10 3.00
1.20 1.80
0.89 1.3
1.70 2.3
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0
0.18
0.55 REF.
0.08 0.26
0.6 REF.
0.95 BSC.
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
Leader Size
7 inch
ORDER INFORMATION
Part Number
Type
SMS3400Y-C
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @Steady State
Pulsed Drain Current 1
TA=25°C
TA=70°C
Maximum Power Dissipation
TA=25°C
Thermal Resistance Junction-Ambient 2 @Steady State
Operating Junction & Storage Temperature
VDS
VGS
ID
IDM
PD
RθJA
TJ, TSTG
Rating
30
±12
5.6
4.5
23
1.2
104
150, -55~150
Unit
V
V
A
A
W
°C / W
°C
http://www.SeCoSGmbH.com/
16-Sep-2019 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4




SeCoS

SMS3400Y-C Datasheet Preview

SMS3400Y-C Datasheet

N-CHANNEL MOSFET

No Preview Available !

Elektronische Bauelemente
SMS3400Y-C
5.6A , 30V , RDS(O ) 27m
-Channel Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min.
Typ.
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current
V(BR)DSS
30
-
VGS(th)
0.65
-
IGSS
-
-
IDSS
-
-
-
21
Static Drain-Source On-Resistance
RDS(ON)
-
25
-
33
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
-
4.8
Qgs
-
1.2
Qgd
-
1.7
Td(on)
-
12
Tr
-
52
Td(off)
-
17
Tf
-
10
Ciss
-
535
Coss
-
130
Crss
-
36
Source-Drain Diode
Forward Voltage
VSD
-
-
Notes:
1. Pulse Width≤300µs, Duty Cycle ≤ 2%.
2. Surface Mounted on FR4 Board, When Mounted on 1 inch2 FR4 Board.
Max.
-
1.5
±100
1
27
33
51
-
-
-
-
-
-
-
-
-
-
1.2
Unit Test Conditions
V VGS=0V, ID=250µA
V VDS=VGS, ID=250µA
nA VGS= ±12V, VDS=0V
µA VDS=24V, VGS=0V
VGS=10V, ID=5.6A
mΩ VGS=4.5V, ID=5A
VGS=2.5V, ID=3A
VGS=4.5V
nC VDS=15V
ID=5.6A
VGS=4.5V
nS VDD=15V
RGEN=2.8Ω
ID=1A
VGS=0V
pF VDS=15V
f =1MHz
V VGS=0V, IS=5.6A
http://www.SeCoSGmbH.com/
16-Sep-2019 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4



Part Number SMS3400Y-C
Description N-CHANNEL MOSFET
Maker SeCoS
Total Page 3 Pages
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