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SMS3404 Datasheet Preview

SMS3404 Datasheet

N-Channel MOSFET

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Elektronische Bauelemente
SMS3404
5.8A, 30V, RDS(ON) 30 m
N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SMS3404 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. This device is suitable
for the use as a load switch or in PWM applications. The source
leads are separated to allow a Kelvin connection to the source,
which may be used to bypass the source inductance.
FEATURES
Lower Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
MARKING
R4
SOT-23
A
L
3
Top View
CB
12
KE
1
3
2
D
F GH J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.80 3.04
2.10 2.55
1.20 1.40
0.89 1.15
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.09 0.18
0.45 0.60
0.08 0.177
0.6 REF.
0.89 1.02
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
Leader Size
7 inch
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (t10s)
Pulsed Drain Current 1
ID
IDM
Thermal Resistance from Junction to Ambient
RθJA
Operating Junction and Storage Temperature
TJ, TSTG
Notes:
1. Repetitive rating : Pulse width is limited by the maximum junction temperature.
Rating
30
±20
5.8
30
357
150, -55~150
Unit
V
V
A
A
°C / W
°C
http://www.SeCoSGmbH.com/
01-Dec-2015 Rev.A
Any changes of specification will not be informed individually.
Page 1 of 3




SeCoS

SMS3404 Datasheet Preview

SMS3404 Datasheet

N-Channel MOSFET

No Preview Available !

Elektronische Bauelemente
SMS3404
5.8A, 30V, RDS(ON) 30 m
N-Channel Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Static Characteristics
Drain-Source Breakdown Voltage
BVDSS
30
-
-
Drain-Source Leakage Current
IDSS - - 1
Gate-Source Leakage Current
IGSS - - ±100
Gate-Threshold Voltage
VGS(th) 1 1.4 3
Static Drain-Source On-Resistance 1
Forward Transconductance 1
RDS(ON)
gfs
-
-
5
23 30
31 42
--
Diode Forward Voltage
VSD - -
Dynamic Characteristics
1
Input Capacitance
Ciss - 820 -
Output Capacitance
Coss
- 118 -
Reverse Transfer Capacitance
Crss - 85 -
Gate Resistance
Rg - - 1.5
Switching Characteristics
Turn-on Delay Time
Td(on)
- 6.5 -
Rise Time
Tr - 3.1 -
Turn-off Delay Time
Td(off)
- 15.1 -
Fall Time
Notes:
1. Pulse Width300µs, Duty Cycle 0.5%.
Tf
- 2.7 -
Unit Test Condition
V VGS=0, ID=250µA
µA VDS=30V, VGS=0
nA VGS= ±20V, VDS=0
V VDS=VGS, ID=250µA
VDS=10V, ID=5.8A
m
VGS=4.5V, ID=4.8A
S VDS=5V, ID=5.8A
V IS=1A
VGS =0
pF VDS=15V
f =1.0MHz
VGS= VDS=0, f =1.0MHz
VDS=15V
nS
VGS=10V
RGEN=3
RL=2.6
http://www.SeCoSGmbH.com/
01-Dec-2015 Rev.A
Any changes of specification will not be informed individually.
Page 2 of 3


Part Number SMS3404
Description N-Channel MOSFET
Maker SeCoS
Total Page 3 Pages
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