Elektronische Bauelemente
SMUN5311DW Series
NPN / PNP
Digital Small Signal Transistors
RoHS Compliant Product
A suffix of “-C” indicates halogen-free.
DESCRIPTION
The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic
bias network consisting of two resistors; a series base resistor and a base−emitter
resistor. These digital transistors are designed to replace a single device and its
external resistor bias network. The BRT eliminates these individual components by
integrating them into a single device. In the SMUN5311DW series, two
complementary BRT devices are housed in the SOT−363 package which is ideal
for low power surface mount applications where board space is at a premium.
FEATURE
Simplifies circuit design
Reduces board space
Reduces component count
Available in 8 mm, 7 inch/3000 unit tape and reel
The devices are Pb-Free
F
DG
SOT-363
A
E
L
B
K
C
H
J
6 54
Q2 R1 R2
R2
R1
Q1
12
3
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.00 2.20
2.15 2.45
1.15 1.35
0.90 1.10
1.20 1.40
0.15 0.35
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.100 REF.
0.525 REF.
0.08 0.15
8°
0.650 TYP.
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS
(TA = 25°C unless otherwise noted, common for Q1 and Q 2, minus sign for Q1(PNP) omitted)
PARAMETER
SYMBOL
VALUE
Collector - Base Voltage
Collector - Emitter Voltage
Collector Currrent – Continuous
VCBO
50
VCEO
50
IC 100
ONE JUNCTION HEATED THERMAL CHARACTERISTICS
Total Device Dissipation, TA=25°C
Total Device Dissipation, Derate above 25°C
187(1)
256(2)
PD
1.5(1)
2.0(2)
Thermal Resistance, Junction to Ambient
670(1)
RθJA
490(2)
BOTH JUNCTION HEATED THERMAL CHARACTERISTICS
Total Device Dissipation, TA=25°C
Total Device Dissipation, Derate above 25°C
250(1)
385(2)
PD
2.0(1)
3.0(2)
Thermal Resistance, Junction to Ambient
493(1)
RθJA
325(2)
Thermal Resistance, Junction to Lead
188(1)
RθJL 208(2)
Junction Temperature & Storage Temperature
Note:
1. FR-4 @ minimum pad
2. FR-4 @ 1.0 x 1.0 inch pad
TJ,TSTG
-55~150
UNIT
Vdc
Vdc
mAdc
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C/W
°C
18-Dec-2009 Rev. A
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