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SMUN5316DW Datasheet Preview

SMUN5316DW Datasheet

NPN / PNP Digital Small Signal Transistors

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Elektronische Bauelemente
SMUN5311DW Series
NPN / PNP
Digital Small Signal Transistors
RoHS Compliant Product
A suffix of “-C” indicates halogen-free.
DESCRIPTION
The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic
bias network consisting of two resistors; a series base resistor and a base−emitter
resistor. These digital transistors are designed to replace a single device and its
external resistor bias network. The BRT eliminates these individual components by
integrating them into a single device. In the SMUN5311DW series, two
complementary BRT devices are housed in the SOT−363 package which is ideal
for low power surface mount applications where board space is at a premium.
FEATURE
Simplifies circuit design
Reduces board space
Reduces component count
Available in 8 mm, 7 inch/3000 unit tape and reel
The devices are Pb-Free
F
DG
SOT-363
A
E
L
B
K
C
H
J
6 54
Q2 R1 R2
R2
R1
Q1
12
3
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.00 2.20
2.15 2.45
1.15 1.35
0.90 1.10
1.20 1.40
0.15 0.35
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.100 REF.
0.525 REF.
0.08 0.15
0.650 TYP.
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS
(TA = 25°C unless otherwise noted, common for Q1 and Q 2, minus sign for Q1(PNP) omitted)
PARAMETER
SYMBOL
VALUE
Collector - Base Voltage
Collector - Emitter Voltage
Collector Currrent – Continuous
VCBO
50
VCEO
50
IC 100
ONE JUNCTION HEATED THERMAL CHARACTERISTICS
Total Device Dissipation, TA=25°C
Total Device Dissipation, Derate above 25°C
187(1)
256(2)
PD
1.5(1)
2.0(2)
Thermal Resistance, Junction to Ambient
670(1)
RθJA
490(2)
BOTH JUNCTION HEATED THERMAL CHARACTERISTICS
Total Device Dissipation, TA=25°C
Total Device Dissipation, Derate above 25°C
250(1)
385(2)
PD
2.0(1)
3.0(2)
Thermal Resistance, Junction to Ambient
493(1)
RθJA
325(2)
Thermal Resistance, Junction to Lead
188(1)
RθJL 208(2)
Junction Temperature & Storage Temperature
Note:
1. FR-4 @ minimum pad
2. FR-4 @ 1.0 x 1.0 inch pad
TJ,TSTG
-55~150
UNIT
Vdc
Vdc
mAdc
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C/W
°C
18-Dec-2009 Rev. A
Page 1 of 28




SeCoS

SMUN5316DW Datasheet Preview

SMUN5316DW Datasheet

NPN / PNP Digital Small Signal Transistors

No Preview Available !

Elektronische Bauelemente
SMUN5311DW Series
NPN / PNP
Digital Small Signal Transistors
ELECTRICAL CHARACTERISTICS(TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL MIN. TYP. MAX.
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Base Cutoff Voltage
Collector-Emitter Cutoff Current
SMUN5311DW
V(BR)CBO
V(BR)CEO
ICBO
ICEO
50
50
-
-
-
--
--
- 100
- 500
- 0.5
SMUN5312DW
- - 0.2
SMUN5313DW
- - 0.1
SMUN5314DW
- - 0.2
SMUN5315DW
- - 0.9
Emitter-Base
Cutoff Current
SMUN5316DW
SMUN5330DW
IEBO
-
-
- 1.9
- 4.3
SMUN5331DW
- - 2.3
SMUN5332DW
- - 1.5
SMUN5333DW
- - 0.18
SMUN5334DW
- - 0.13
SMUN5335DW
- - 0.2
ON CHARACTERISTICS 3
SMUN5311DW
- - 0.25
SMUN5312DW
- - 0.25
SMUN5313DW
- - 0.25
SMUN5314DW
- - 0.25
SMUN5335DW
- - 0.25
Collector-Emitter
Saturation Voltage
SMUN5330DW
SMUN5331DW
VCE(sat)
-
-
- 0.25
- 0.25
SMUN5315DW
- - 0.25
SMUN5316DW
- - 0.25
SMUN5332DW
- - 0.25
SMUN5333DW
- - 0.25
SMUN5334DW
- - 0.25
SMUN5311DW
35 60
-
SMUN5312DW
60 100
-
SMUN5313DW
80 140
-
SMUN5314DW
80 140
-
SMUN5315DW
160 350
-
DC Current Gain
SMUN5316DW
SMUN5330DW
hFE
160 350
3.0 5.0
-
-
SMUN5331DW
8.0 15
-
SMUN5332DW
15 30
-
SMUN5333DW
80 200
-
SMUN5334DW
80 150
-
SMUN5335DW
Note:
3. Pulse test: pulse width <300 µS, duty cycle<2.0%
80
140
-
UNIT
TEST CONDITION
V IC=10µA, IE=0
V IC =2mA, IB = 0
nA VCB=50V, IE=0
nA VCE=50V, IB=0
mA VEB=6V, IC=0
IC=10mA, IB=0.3mA
Vdc IC=10mA, IB=5mA
IC=10mA, IB=1mA
VCE=10V, IC=5mA
18-Dec-2009 Rev. A
Page 2 of 28


Part Number SMUN5316DW
Description NPN / PNP Digital Small Signal Transistors
Maker SeCoS
Total Page 28 Pages
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