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SPR40N01 Datasheet Preview

SPR40N01 Datasheet

N-Channel Enhancement Mode Power MOSFET

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Elektronische Bauelemente
SPR40N01
100A , 40V , RDS(ON) 2.3 m
N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SPR40N01 provide the designer with the best
combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness. The PR-8PP package
is universally preferred for all commercial-industrial surface
mount applications and suited for low voltage applications
such as DC/DC converters.
PR-8PP
FEATURES
Lower Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
MARKING
40N01
= Date code
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.9 5.1
5.7 5.9
5.95 6.2
1.27 BSC.
0.35 0.49
0.1 0.2
REF.
G
H
I
J
K
L
Millimeter
Min. Max.
0.8 1.0
0.254 Ref.
4.0 Ref.
3.4 Ref.
0.6 Ref.
1.4 Ref.
PACKAGE INFORMATION
Package
MPQ
PR-8PP
3K
Leader Size
13 inch
S
S
S
G
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 1@VGS=10V
TC=25°C 3
TC=70°C 3
TA=25°C
Pulsed Drain Current 1
TA=70°C
Single Pulse Avalanche Energy, L=15mH
VDS
VGS
ID
IDM
EAS
Avalanche Current, L=15mH
Total Power Dissipation
TC=25°C
TA=25°C
Operating Junction & Storage Temperature
IAS
PD
TJ, TSTG
Thermal Resistance Rating
Thermal Resistance Junction-Ambient2(Max).
Thermal Resistance Junction-Case2(Max).
RθJA
RθJC
Rating
40
±20
100
100
31
25
400
201
63.5
83
3.6
-55~150
35
1.5
D
D
D
D
Unit
V
V
A
A
mJ
A
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
13-Mar-2015 Rev.A
Any changes of specification will not be informed individually.
Page 1 of 4




SeCoS

SPR40N01 Datasheet Preview

SPR40N01 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

Elektronische Bauelemente
SPR40N01
100A , 40V , RDS(ON) 2.3 m
N-Channel Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
BVDSS
VGS(th)
40 -
2-
- V VGS=0, ID= 250µA
4 V VDS=VGS, ID=250µA
Gate-Source Leakage Current
IGSS - - ±100 nA VGS= ±20V
Drain-Source Leakage Current
Static Drain-Source On-Resistance
IDSS
RDS(ON)
- - 1 µA VDS=32V, VGS=0, TJ=25°C
- 1.8 2.3 mVGS=10V, ID=30A
Total Gate Charge
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 78 -
ID=30A
Qgs - 22 - nC VDS=20V
Qgd - 4.7 -
VGS=10V
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Td(off)
Tf
- 21 -
-
-
6
98
-
-
VDS=20V
nS
ID=30A
VGS=10V
RG=3
- 17 -
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy 4
Ciss - 4222 -
Coss
- 889 -
Crss - 398 -
Guaranteed Avalanche Characteristics
EAS
110 -
-
Source-Drain Diode
VGS =0
pF VDS=20V
f =1.0MHz
mJ VDD=20V, L=0.1mH, IAS=47A
Diode Forward Voltage
VSD - - 1.3 V IS=30A, VGS=0V
Reverse Recovery Time
Reverse Recovery Charge
trr - 32 - nS IF=30A, dl/dt=100A/µs,
Qrr
- 120 -
nC TJ=25°C
Note:
1. The data tested by pulsed , pulse width 300us , duty cycle 2%
2. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the
user's board design. RθJA shown below for single device operation on FR-4 in still air.
3. Package Limitation current is 100A.
4. The Min. value is 100% EAS tested guarantee.
http://www.SeCoSGmbH.com/
13-Mar-2015 Rev.A
Any changes of specification will not be informed individually.
Page 2 of 4


Part Number SPR40N01
Description N-Channel Enhancement Mode Power MOSFET
Maker SeCoS
Total Page 4 Pages
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