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SPR50N06-C - N-Channel Enhancement Mode Power MOSFET

Description

The SPR50N06-C provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Features

  • Lower Gate Charge.
  • Advanced High Cell Density Trench Technology.
  • Green Device Available.

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Datasheet Details

Part number SPR50N06-C
Manufacturer SeCoS
File Size 710.60 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet SPR50N06-C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Elektronische Bauelemente SPR50N06-C 50A, 60V, RDS(ON) 12mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SPR50N06-C provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The PR-8PP package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
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