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SPR82N06S-C - N-Channel Shielded Gate Trench Power MOSFET

General Description

The SPR82N06S-C is the Shielded Gate Technology N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

The SPR82N06S-C meet the RoHS and Green Product requirement with full function reliability approved.

Key Features

  • Shielded Gate Trench Technology.
  • Super Low Gate Charge.
  • Green Device Available.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SPR82N06S-C 82A, 60V, RDS(ON) 5.2mΩ N-Channel Shielded Gate Trench Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SPR82N06S-C is the Shielded Gate Technology N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SPR82N06S-C meet the RoHS and Green Product requirement with full function reliability approved. FEATURES  Shielded Gate Trench Technology  Super Low Gate Charge  Green Device Available MARKING PR-8PP 82N06S   = Date Code PACKAGE INFORMATION Package MPQ PR-8PP 3K Leader Size 13 inch ORDER INFORMATION Part Number Type S SPR82N06S-C S Lead (Pb)-free and Halogen-free S G REF.