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SPRD4560-C Datasheet - SeCoS

Dual N-Channel MOSFET

SPRD4560-C Features

* Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING 4560 =Date Code PACKAGE INFORMATION Package MPQ DFN5x6-8D 3K Leader Size 13 inch REF. A B C D E F G Millimeter Min. Max. 5.70 5.80 5.90 6.10 4.80 5.00 3.61 3.96 0.06 0.20 3.38 3.78 1.1

SPRD4560-C General Description

The SPRD4560-C is the highest performance trench Dual N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SPRD4560-C meet the RoHS and Green Product requirement with full function reliability approv.

SPRD4560-C Datasheet (416.10 KB)

Preview of SPRD4560-C PDF

Datasheet Details

Part number:

SPRD4560-C

Manufacturer:

SeCoS

File Size:

416.10 KB

Description:

Dual n-channel mosfet.
Elektronische Bauelemente SPRD4560-C 24A, 60V, RDS(O ) 45mΩ Dual -Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies.

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SPRD4560-C Dual N-Channel MOSFET SeCoS

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