* Shielded Gate Trench Technology
* High Speed Power Smooth Switching
* Enhanced Body diode dv/dt capability
* 100% UIS Tested, 100% Rg Tested
* Super Low Gate Charge
* Green Device Available TOLL-8 MARKING SPT 258N10SV = Date Code PACKAGE INFORMATION Package MP
SPT258N10SV-C Datasheet (603.37 KB)
SPT258N10SV-C
SeCoS
603.37 KB
N-channel shielded gate trench power mosfet.
Elektronische Bauelemente SPT258N10SV-C 258A, 100V, RDS(ON) 2.5mΩ N-Channel Shielded Gate Trench Power MOSFET RoHS Compliant Product A suffix of “-C.
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