SPT258N10SV-C N-Channel Shielded Gate Trench Power MOSFET

SeCoS

SPT258N10SV-C Description

Elektronische Bauelemente SPT258N10SV-C 258A, 100V, RDS(ON) 2.5mΩ N-Channel Shielded Gate Trench Power MOSFET RoHS Compliant Product A suffix of “-C.

SPT258N10SV-C Features

* Shielded Gate Trench Technology
* High Speed Power Smooth Switching
* Enhanced Body diode dv/dt capability
* 100% UIS Tested, 100% Rg Tested
* Super Low Gate Charge
* Green Device Available TOLL-8 MARKING SPT 258N10SV   = Date Code PACKAGE INFORMATION Package MP

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SPT258N10SV-C Datasheet Preview — Preview of SPT258N10SV-C PDF

Datasheet Details

Part number: SPT258N10SV-C
Manufacturer: SeCoS
File Size: 603.37 KB
Datasheet: SPT258N10SV-C-SeCoS.pdf
Description: N-Channel Shielded Gate Trench Power MOSFET

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N-Channel Shielded Gate Trench Power MOSFET SeCoS

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