SPT585N08SV-C - N-Channel Shielded Gate Trench Power MOSFET

SeCoS Halbleitertechnologie GmbH

Key Features

Shielded Gate Trench Technology.
High Speed Power Smooth Switching.
Enhanced Body diode dv/dt capability.
100% UIS Tested, 100% Rg Tested.
Super Low Gate Charge.
Green Device Available TOLL-8.

SPT585N08SV-C n-channel shielded gate trench power mosfet by SeCoS Halbleitertechnologie GmbH - Datasheet Preview

Datasheet Details

Part number	SPT585N08SV-C
Manufacturer	SeCoS Halbleitertechnologie GmbH
File Size	825.51 KB
Description	N-Channel Shielded Gate Trench Power MOSFET
Datasheet	SPT585N08SV-C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SPT585N08SV-C 585A, 80V, RDS(ON) 0.