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SSA70N90J - N-Channel MOSFET

General Description

SSA70N90J uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.

This device is suitable for the use in a wide variety of applications.

Key Features

  • High density cell design for ultra low RDS(on) Lead free product is acquired Good stability and uniformity with high EAS Excellent package for good heat dissipation Special processing technology for high ESD capability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SSA70N90J 90A, 70V, RDS(ON) 7.5 mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION SSA70N90J uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. This device is suitable for the use in a wide variety of applications.