SeCoS Halbleitertechnologie GmbH SSD13P06-C
The SSD13P06-C is the highest performance trench P-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSD13P06-C meet the RoHS and Green Product requirement with full function reliability approved.| Part No. | SSD13P06-C |
|---|---|
| Datasheet | SSD13P06-C Download |
| Manufacturer |  SeCoS Halbleitertechnologie GmbH |
| Description | P-Channel Enhancement Mode Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
Advanced high cell density Trench technology Lower Gate Charge Green Device Available MARKING 13P06 = Date code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch ORDER INFORMATION Part Number Type SSD13P06-C Lead (Pb)-free and Halogen-free TO-252 A B C D GE K HF N O P M J REF. Millimeter Min. Max. REF. Millimeter Min. Max. A 6.35 6.90 J 2.186 2.386 B 4.95 5.50 K 0.64 1.14 C 2.10 2.50 M 0.50 1.14 D 0.43 0.9 N 1.3 1.8 E 6.0 7.5 O 0 0.13 F 2.90 REF P 0.58REF. G 5.40 6.40 H 0.60 1.20 2 Drain 1 GateABSOLUTE MAXIMUM RATINGS
Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current 1 @VGS= -10V TC=100°C ID TA=25°C Pulsed Drain Current 2 TA=70°C IDM Total Power Dissipation 3 TC=25°C PD TA=25°C Operating Junction & Storage Temperature Range TJ, TSTG Thermal Resistance Rating Thermal Resistance Junction-Ambient 1 RθJA Thermal Resistance Junction-Case 1 RθJC 16-Jan-2020 Rev. A Rating -60 ±20 -13 -8.3 -3.3 -2.7 -26 31.3 2 -55~150 3 Source Unit V V A A W °C 62 °C/W 4 Any changes of specification will not be informed individually.
