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SSD20N06-C - N-Ch Enhancement Mode Power MOSFET

General Description

The SSD20N06-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications.

The SSD20N06-C meet the RoHS and Green Product requirement with full function reliability approved.

Key Features

  • Advanced high cell density Trench technology.
  • Super Low Gate Charge.
  • Green Device Available.

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Full PDF Text Transcription for SSD20N06-C (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SSD20N06-C. For precise diagrams, and layout, please refer to the original PDF.

Elektronische Bauelemente SSD20N06-C 20A, 60V, RDS(ON) 43mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION ...

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Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSD20N06-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications. The SSD20N06-C meet the RoHS and Green Product requirement with full function reliability approved. FEATURES  Advanced high cell density Trench technology  Super Low Gate Charge  Green Device Available MARKING 20N06   = Date Code PACKAGE INFORMATION Package MPQ Leader Size TO-252 2.

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