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SSD20N15 Datasheet Preview

SSD20N15 Datasheet

N-CHANNEL MOSFET

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Elektronische Bauelemente
SSD20N15
20A, 150V, RDS(ON) 70m
N-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
FEATURES
150V, 20A, RDS(ON)70m@VGS=10V
Super high dense cell design for extremely low RDS(ON)
High power and current handing capability
Green Device Available
TO-252 (D-Pack)
PACKAGE INFORMATION
Package
MPQ
TO-252
2.5K
Leader Size
13 inch
MARKING
20N15
Date Code
1
Gate
2
Drain
3
Source
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current @VGS=10V 1 TC=25°C
ID
TC=100°C
Pulsed Drain Current 2
IDM
Total Power Dissipation 3
TC=25°C
PD
TA=25°C
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Rating
Maximum Thermal Resistance from Junction to Case 1
RθJC
Maximum Thermal Resistance from Junction to Ambient 1
RθJA
A
B
C
D
GE
K
HF
N
O
P
M
J
REF.
Millimeter
Min. Max.
REF.
Millimeter
Min. Max.
A 6.35 6.90 J 2.336 REF.
B 4.95 5.50 K 0.89 REF.
C 2.10 2.50 M 0.50 1.14
D 0.43 0.9 N 1.3 1.8
E 6.0 7.5 O 0 0.13
F
2.90 REF
P 0.58 REF.
G 5.40 6.40
H 0.60 1.20
Rating
150
±25
20
14
70
50
2
-55~150
2.5
62.5
Unit
V
V
A
A
A
W
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
25-Feb-2016 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 5




SeCoS

SSD20N15 Datasheet Preview

SSD20N15 Datasheet

N-CHANNEL MOSFET

No Preview Available !

Elektronische Bauelemente
SSD20N15
20A, 150V, RDS(ON) 70m
N-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max. Unit
Test Condition
Drain-Source Breakdown Voltage BVDSS
150
-
Gate-Threshold Voltage
VGS(th)
2
-
-
V VGS=0, ID=250µA
4
V VDS=VGS, ID=250µA
Gate-Source Leakage Current
IGSS
-
-
±100
nA VGS= ±25V
Drain-Source
TJ=25°C
Leakage Current TJ=85°C
-
-
1
IDSS
µA VDS=120V, VGS =0
-
-
30
Static Drain-Source
On-Resistance 2
-
RDS(ON)
-
55
70
VGS=10V, ID=15A
m
65
85
VGS=6V, ID=10A
Total Gate Charge
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Qg
-
20
-
ID=15A
Qgs
-
5.5
-
nC VDS=75V
Qgd
-
7
-
VGS=10V
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
-
6
-
VDS=75V
Tr
-
5
-
nS ID=10A
Td(off)
-
13
-
VGS=10V
Tf
-
6
-
RGEN=3
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Forward Voltage 2
Continuous Source Current 1,4
Pulsed Source Current 2,4
Ciss
-
1270
-
VGS=0V
Coss
-
115
-
pF VDS=25V
Crss
-
55
-
f =1MHz
Source-Drain Diode Characteristics
VSD
-
-
1.2
V VGS=0V, IS=10A, TJ=25°C
IS
-
-
20
A VD=VG=0V, Force Current
ISM
-
-
70
Reverse Recovery Time
Reverse Recovery Charge
TRR
-
QRR
-
30
-
nS
IF=10A, dI/dt=100A/µs, TJ=25°C
100
-
nC
Notes:
1. The data is tested when the surface of the device is mounted on a 1 inch2 FR-4 board with 2OZ copper,10sec, 110°C /W at steady state
2. The data is tested by the pulse: Pulse width300us, duty cycle2%
3. The power dissipation is limited by 150°C juncti on temperature
4. The data is theoretically the same as ID and IDM; in real applications, it should be limited by the total power dissipation.
http://www.SeCoSGmbH.com/
25-Feb-2016 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 5



Part Number SSD20N15
Description N-CHANNEL MOSFET
Maker SeCoS
Total Page 3 Pages
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