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SSD25N10-C - N-Ch Enhancement Mode Power MOSFET

Description

The SSD25N10-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications.

The SSD25N10-C meet the RoHS and Green Product requirement with full function reliability approved.

Features

  • Advanced high cell density Trench technology.
  • Super Low Gate Charge.
  • Green Device Available.

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Datasheet Details

Part number SSD25N10-C
Manufacturer SeCoS
File Size 229.20 KB
Description N-Ch Enhancement Mode Power MOSFET
Datasheet download datasheet SSD25N10-C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SSD25N10-C 25A, 100V, RDS(ON) 48mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSD25N10-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications. The SSD25N10-C meet the RoHS and Green Product requirement with full function reliability approved. FEATURES  Advanced high cell density Trench technology  Super Low Gate Charge  Green Device Available MARKING 25N10   = Date Code PACKAGE INFORMATION Package MPQ TO-252 2.
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