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SSD25N10-C - N-Ch Enhancement Mode Power MOSFET

SSD25N10-C Description

Elektronische Bauelemente SSD25N10-C 25A, 100V, RDS(ON) 48mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies ha.
The SSD25N10-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(on) and gate charge for most.

SSD25N10-C Features

* Advanced high cell density Trench technology
* Super Low Gate Charge
* Green Device Available MARKING 25N10   = Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch 2 ORDER INFORMATION Drain Part Number SSD25N10-C Type 1 Lead (Pb)-free and Halo

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Datasheet Details

Part number
SSD25N10-C
Manufacturer
SeCoS
File Size
229.20 KB
Datasheet
SSD25N10-C-SeCoS.pdf
Description
N-Ch Enhancement Mode Power MOSFET

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N-Ch Enhancement Mode Power MOSFET SeCoS
SeCoS SSD25N10-C-like datasheet