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SSD3055 - N-Channel MOSFET

General Description

The SSD3055 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications .

Key Features

  • Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available  Drain REF. A B C D GE K M J HF.

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Full PDF Text Transcription for SSD3055 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SSD3055. For precise diagrams, and layout, please refer to the original PDF.

SSD3055 Elektronische Bauelemente 18A , 30V , RDS(ON) 22Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION Th...

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mpliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSD3055 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications . TO-252(D-Pack) FEATURES      Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available  Drain REF. A B C D GE K M J HF MARKING 3055  Date Code N O P  Gate PACKAGE INFORMATION Package TO-252 MPQ 2.5K Leader Size 13 inch  Source A B C D E F G H Millimeter Min. Max.

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