SSD40N10-30D - N-Ch Enhancement Mode Power MOSFET

SeCoS Halbleitertechnologie GmbH

Key Features

Low RDS(on) trench technology. Low thermal impedance. Fast switching speed. TO-252(D-Pack).

SSD40N10-30D n-ch enhancement mode power mosfet by SeCoS Halbleitertechnologie GmbH - Datasheet Preview

Datasheet Details

Part number	SSD40N10-30D
Manufacturer	SeCoS Halbleitertechnologie GmbH
File Size	763.75 KB
Description	N-Ch Enhancement Mode Power MOSFET
Datasheet	SSD40N10-30D Datasheet

Full PDF Text Transcription for SSD40N10-30D (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SSD40N10-30D. For precise diagrams, and layout, please refer to the original PDF.

SSD40N10-30D Elektronische Bauelemente 26A, 100V, RDS(ON) 36mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free FEATURES ...

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HS Compliant Product A suffix of “-C” specifies halogen free FEATURES Low RDS(on) trench technology. Low thermal impedance. Fast switching speed. TO-252(D-Pack) APPLICATION PoE Power Sourcing Equipment. PoE Powered Devices. Telecom DC/DC converters. White LED boost converters. A B C D GE PACKAGE INFORMATION Package TO-252 MPQ 2.5K Leader Size 13’ inch A B C D E F G H M REF. K HF N O P J Millimeter Min. Max. 6.4 6.8 5.20 5.50 2.20 2.40 0.45 0.58 6.8 7.3 2.40 3.0 5.40 6.2 0.8 1.20 REF. J K M N O P Millimeter Min. Max. 2.30 REF. 0.70 0.90 0.50 1.1 0.9 1.6 0 0.15 0.43 0.

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